Semiconductor device

ABSTRACT

To provide a highly reliable semiconductor device in which a transistor including an oxide semiconductor film has stable electric characteristics. The semiconductor device includes a gate electrode layer over a substrate, a gate insulating film over the gate electrode layer, an oxide semiconductor film over the gate insulating film, a drain electrode layer which is over the oxide semiconductor film so as to overlap with the gate electrode layer, and a source electrode layer provided so as to cover part of an outer edge portion of the oxide semiconductor film. An outer edge portion of the drain electrode layer is on an inner side than an outer edge portion of the gate electrode layer.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This document relates to a semiconductor device and a manufacturingmethod thereof.

In this specification, a semiconductor device refers to a device whichcan function by utilizing semiconductor characteristics; a transistor,an electro-optical device, a semiconductor circuit, and an electronicdevice are all included in the category of the semiconductor device.

2. Description of the Related Art

A technique by which transistors are formed using semiconductor thinfilms formed over a substrate having an insulating surface has beenattracting attention. The transistor is applied to a wide range ofelectronic devices such as an integrated circuit (IC) or an imagedisplay device (display device). A silicon-based semiconductor materialis widely known as a material for a semiconductor thin film applicableto a transistor. As another material, an oxide semiconductor has beenattracting attention.

For example, a transistor including an amorphous oxide semiconductorfilm containing indium (In), gallium (Ga), and zinc (Zn) is disclosed(see Patent Document 1).

REFERENCE Patent Document

-   [Patent Document 1] Japanese Published Patent Application No.    2006-165528

SUMMARY OF THE INVENTION

Electric characteristics of a transistor in which a channel is formed inan oxide semiconductor film might change depending on processingconditions or heat treatment conditions. This change is probably causedby entry of impurities such as hydrogen in forming the oxidesemiconductor film or by release of oxygen from the oxide semiconductorfilm. Further, it has been found that this change tends to be obvious atan end portion of the oxide semiconductor film. In other words, it hasbeen found that in the transistor in which the channel is formed in theoxide semiconductor film, the end portion of the oxide semiconductorfilm becomes a low-resistance region and a parasitic channel of thetransistor is easily formed in the region. Note that the transistor hasa possibility that two kinds of channels are formed in accordance with avoltage between a gate and a source: a channel (also referred to as afirst channel) formed in a region of an oxide semiconductor film, whichoverlaps with a gate and is on the shortest path between a source and adrain, and a parasitic channel (also referred to as a second channel)are formed.

In the transistor in which two kinds of channels are possibly formed,each threshold voltage (a voltage between the gate and the source atwhich the channel is formed) differs in many cases. Typically, thethreshold voltage at which the first channel is formed is higher thanthe threshold voltage at which the second channel is formed. The currentdrive capability of the first channel is higher than that of the secondchannel. Thus, in the case where the gate voltage (the voltage betweenthe gate and the source) of the transistor in an off state is increased,a current between the source and the drain changes in two stages.Specifically, a change in the first stage (an increase in the currentbetween the source and the drain) is observed in the vicinity of thethreshold voltage at which the second channel is formed, and then, achange in the second stage (an increase in the current between thesource and the drain) is observed in the vicinity of the thresholdvoltage at which the first channel is formed.

In view of the above problem, an object is to provide a highly reliablesemiconductor device in which a transistor using an oxide semiconductorfilm has stable electric characteristics.

A parasitic channel is formed at an end portion of the oxidesemiconductor film due to a source and a drain of the transistor whichare electrically connected to the end portion. In other words, when atleast one of the source and the drain of the transistor is notelectrically connected to the end portion, the parasitic channel is notformed at the end portion. Therefore, an object of one embodiment of thepresent invention is to provide a transistor having a structure in whichat least one of a source and a drain of the transistor is notelectrically connected to an end portion of an oxide semiconductor film.

One embodiment of the present invention is a semiconductor deviceincluding a gate electrode layer, a gate insulating film over the gateelectrode layer, an oxide semiconductor film over the gate insulatingfilm, a drain electrode layer being over the oxide semiconductor filmand overlapping with the gate electrode layer, and a source electrodelayer provided to cover part of an outer edge portion of the oxidesemiconductor film. An outer edge portion of the drain electrode layeris positioned on an inner side than an outer edge portion of the gateelectrode layer.

Another embodiment of the present invention is a semiconductor deviceincluding a gate electrode layer having an opening portion, a gateinsulating film over the gate electrode layer, an oxide semiconductorfilm over the gate insulating film, a drain electrode layer being overthe oxide semiconductor film and overlapping with an inner edge portionof the gate electrode layer, and a source electrode layer provided tocover part of an outer edge of the oxide semiconductor film. An outeredge portion of the drain electrode layer is positioned on an inner sidethan an outer edge portion of the gate electrode layer.

The gate electrode layer includes a first conductive layer, a secondconductive layer, and a third conductive layer. As the first conductivelayer and the third conductive layer, a barrier layer for blockingtransfer of metal of the second conductive layer is preferably used.Further, each of the source electrode layer and the drain electrodelayer includes a fourth conductive layer, a fifth conductive layer, anda sixth conductive layer. As the fourth conductive layer and the sixthconductive layer, a barrier layer for blocking transfer of metal of thefifth conductive layer is preferably used.

A planar shape of the gate electrode layer may be a rectangle.

A planar shape of the drain electrode layer may be a rectangle.

The oxide semiconductor film may include an amorphous part and a crystalpart. In the crystal part, the c-axis may be aligned to the directionparallel to the normal vector of the surface where the oxidesemiconductor film is formed or to the normal vector of the surface ofthe oxide semiconductor film.

The oxide semiconductor film can contain at least indium.

In addition, the semiconductor device may further include, over theoxide semiconductor film, the source electrode layer, and the drainelectrode layer, an oxide insulating film including an oxygen excessregion, a barrier film over the oxide insulating film, a planarizationinsulating film over the barrier film, and a pixel electrode layer whichis in contact with the drain electrode layer through an opening portionformed in the oxide insulating film, the barrier film, and theplanarization insulating film.

In accordance with one embodiment of the present invention, it ispossible to provide a highly reliable semiconductor device by givingstable electric characteristics to a transistor using an oxidesemiconductor film.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B are a plan view and a cross-sectional view illustratingone embodiment of a semiconductor device.

FIGS. 2A and 2B are a plan view and a cross-sectional view illustratingone embodiment of a semiconductor device.

FIGS. 3A and 3B are a plan view and a cross-sectional view illustratingone embodiment of a semiconductor device.

FIGS. 4A and 4B are a plan view and a cross-sectional view illustratingone embodiment of a semiconductor device.

FIGS. 5A and 5B are a plan view and a cross-sectional view illustratingone embodiment of a semiconductor device.

FIGS. 6A to 6C are each a cross-sectional view illustrating oneembodiment of a semiconductor device.

FIGS. 7A to 7E are cross-sectional views illustrating one embodiment ofa method for manufacturing a semiconductor device.

FIGS. 8A to 8D are cross-sectional views illustrating one embodiment ofa method for manufacturing a semiconductor device.

FIGS. 9A to 9C are cross-sectional views illustrating one embodiment ofa method for manufacturing a semiconductor device.

FIG. 10 illustrates a configuration example of a display device.

FIG. 11 illustrates a configuration example of a scan line drivercircuit.

FIG. 12 shows an example of waveforms of a variety of signals.

FIG. 13A illustrates terminals of a pulse output circuit, and FIG. 13Billustrates terminals of an inverted pulse output circuit.

FIG. 14A illustrates a configuration example of a pulse output circuit,and FIG. 14B shows an operation example thereof.

FIG. 15A illustrates a configuration example of an inverted pulse outputcircuit, and FIG. 15B shows an operation example thereof.

FIG. 16A illustrates a configuration example of a pixel, and FIG. 16Bshows an operation example thereof.

FIG. 17A is a cross-sectional view of part of a pixel of a displaydevice using an organic EL element, and FIG. 17B is a cross-sectionalview of a light-emitting layer in the pixel.

FIG. 18A is a circuit diagram of a pixel of a display device using aliquid crystal element, and FIG. 18B is a cross-sectional view of thepixel.

FIGS. 19A to 19C illustrate electronic devices.

FIGS. 20A to 20C illustrate an electronic device.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, embodiments of the invention disclosed in thisspecification will be described with reference to the accompanyingdrawings. Note that the invention disclosed in this specification is notlimited to the following description, and it is easily understood bythose skilled in the art that modes and details can be variously changedwithout departing from the spirit and the scope of the invention.Therefore, the invention disclosed in this specification is notconstrued as being limited to the description of the followingembodiments. Note that the ordinal numbers such as “first” and “second”in this specification are used for convenience and do not denote theorder of steps or the stacking order of layers. In addition, the ordinalnumbers in this specification do not denote particular names whichspecify the present invention.

In addition, in this specification and the like, the term such as“electrode” or “wiring” does not limit a function of a component. Forexample, an “electrode” is sometimes used as part of a “wiring”, andvice versa. Furthermore, the term “electrode” or “wiring” can includethe case where a plurality of “electrodes” or “wirings” is formed in anintegrated manner.

Functions of a “source” (or “source electrode layer”) and a “drain” (or“drain electrode layer”) are sometimes replaced with each other when atransistor of opposite polarity is used or when the direction of currentflowing is changed in circuit operation, for example. Therefore, theterms “source” and “drain” can be replaced with each other in thisspecification and the like.

Note that in this specification and the like, the term “electricallyconnected” includes the case where components are connected through anobject having any electric function. There is no particular limitationon an object having any electric function as long as electric signalscan be transmitted and received between components that are connectedthrough the object.

In this specification and the like, the phrase “transistor is on” (or“transistor is in an on state”) means a state where the gate voltage ofthe transistor is higher than or equal to the threshold voltage. Forexample, in the case where an n-channel transistor has a plurality ofthreshold voltages, the state where the transistor is on means a statewhere the gate voltage is higher than or equal to the lowest thresholdvoltage. Further, in the phrase “transistor is off” (or “transistor isin an off state”) means a state where the gate voltage of the transistoris lower than the threshold voltage. Thus, the transistor having“normally-on” electric characteristics is in an on state when the gatevoltage of the transistor is 0 V. In other words, the “normally-ontransistor” is a transistor the threshold voltage of which is lower thanor equal to 0 V. Alternatively, a transistor having “normally-off”electric characteristics is in an off state when the gate voltage of thetransistor is 0 V. In other words, the “normally-off transistor” is atransistor the threshold voltage of which is higher than 0 V.

Embodiment 1

In this embodiment, structures of some embodiments of a semiconductordevice will be described with reference to FIGS. 1A and 1B, FIGS. 2A and2B, FIGS. 3A and 3B, FIGS. 4A and 4B, FIGS. 5A and 5B, and FIGS. 6A to6C.

FIG. 1A is a plan view of a transistor 201, and FIG. 1B is across-sectional view taken along dashed-dotted line A-B in FIG. 1A. Notethat some of components of the transistor 201 (e.g., a gate insulatingfilm 112) are omitted in FIG. 1A to avoid complexity.

The transistor 201 illustrated in FIGS. 1A and 1B includes, over asubstrate 100 having an insulating surface, a gate electrode layer 106,the gate insulating film 112 provided over the gate electrode layer 106,and an oxide semiconductor film 114 provided over the gate insulatingfilm 112. In addition, over the oxide semiconductor film 114, a drainelectrode layer 116 a provided to overlap with the gate electrode layer106 and a source electrode layer 116 b provided to cover part of theouter edge portion of the oxide semiconductor film 114 are included. Theouter edge portion of the drain electrode layer 116 a is positioned onthe inner side than the outer edge portion of the gate electrode layer106.

Furthermore, over the transistor 201, an insulating film 122, aninsulating film 124, and a planarization insulating film 126 may beprovided.

With such a structure that the outer edge portion of the drain electrodelayer 116 a is positioned on the inner side than the outer edge portionof the gate electrode layer 106, the drain electrode layer 116 a is notelectrically connected to the outer edge portion of the oxidesemiconductor film 114. Thus, the drain electrode layer 116 a is notaffected by the outer edge portion of the oxide semiconductor film 114.As a result, the threshold voltage of the transistor 201 can beprevented from shifting in the negative direction.

Further, as illustrated in FIGS. 1A and 1B, it is preferable that thesource electrode layer 116 b be provided to cover part of the outer edgeportion of the oxide semiconductor film 114. The part of the outer edgeportion of the oxide semiconductor film 114 is covered with the sourceelectrode layer 116 b, whereby entry of impurities into the oxidesemiconductor film 114 or release of oxygen from the oxide semiconductorfilm 114 can be prevented.

Note that with respect to the oxide semiconductor film, the followingelements may serve as impurities: hydrogen, a metal element such ascopper, an alkali metal element, or an alkaline earth metal element, anelement that is not a constituent element of the oxide semiconductorfilm, and the like. In addition, a molecular including the above element(e.g., water or a hydrogen compound) or the like may also serve as animpurity. Therefore, in this specification and the like, impurities withrespect to the oxide semiconductor film indicate the above element andmolecular thereof.

The gate electrode layer 106 can be formed using a metal material suchas molybdenum, titanium, tantalum, tungsten, aluminum, copper, chromium,neodymium, or scandium or an alloy material which contains any of thesematerials as a main component. Alternatively, the gate electrode layer106 can be formed using a conductive material such as indium oxide-tinoxide, indium oxide including tungsten oxide, indium zinc oxideincluding tungsten oxide, indium oxide including titanium oxide, indiumtin oxide including titanium oxide, indium oxide-zinc oxide, or indiumtin oxide to which silicon oxide is added. In addition, the gateelectrode layer 106 is formed to have a single-layer structure or astacked structure using any of the above conductive materials.

In the case where the gate electrode layer 106 has a single-layerstructure, for example, a 100-nm-thick tungsten film can be used.

In the case where a copper film or an aluminum film is used for part ofthe gate electrode layer 106, a barrier layer is preferably provided toprevent copper or aluminum from reaching the oxide semiconductor film114. As a barrier layer for blocking transfer of copper or aluminum, atantalum nitride film, a tungsten film, a tungsten nitride film, amolybdenum film, a molybdenum nitride film, a titanium film, a titaniumnitride film, a chromium film, or a chromium nitride film can be given.Any of the above films is selected as appropriate and provided to be incontact with the copper film or the aluminum film, so that copper oraluminum can be prevented from reaching the oxide semiconductor film114.

In the case where the gate electrode layer 106 has a stacked structureincluding two layers, for example, a 30-nm-thick tantalum nitride filmand a 200-nm-thick copper film can be stacked to form the gate electrodelayer 106. With use of the copper film, wiring resistance can bereduced. Instead of the 30-nm-thick tantalum nitride film, a tungstenfilm, a tungsten nitride film, a molybdenum nitride film, or a titaniumnitride film may be used.

In the case where the gate electrode layer 106 has a stacked layerincluding three layers, a 30-nm-thick tantalum nitride film, a200-nm-thick copper film, and a 30-nm-thick tungsten film can be stackedto form the gate electrode layer 106. Further, instead of the30-nm-thick tantalum nitride film, a tungsten film, a tungsten nitridefilm, a molybdenum nitride film, or a titanium nitride film may be used.Alternatively, instead of the 30-nm-thick tungsten film, a molybdenumfilm may be formed. With use of the copper film, wiring resistance canbe reduced. With a structure in which the tungsten film or themolybdenum film is stacked over the copper film, copper can be preventedfrom reaching the oxide semiconductor film 114. In addition, tungstenand molybdenum have a relatively high work function; thus, it ispreferable to use the tungsten film or the molybdenum film for the gateelectrode layer 106 because the threshold voltage of the transistor islikely to be positive (i.e., a normally-off transistor is likely to beformed). Note that when the gate insulating film 112 has a function ofpreventing copper from reaching the oxide semiconductor film 114, eitherthe tungsten film or the molybdenum film is not necessarily formed.

The gate insulating film 112 can be formed using silicon oxide, galliumoxide, aluminum oxide, silicon nitride, silicon oxynitride, aluminumoxynitride, or silicon nitride oxide. When the gate insulating film 112is formed using a high-k material such as hafnium oxide, yttrium oxide,hafnium silicate (HfSi_(x)O_(y) (x>0, y>0)), hafnium silicate to whichnitrogen is added (HfSiO_(x)N_(y) (x>0, y>0)), hafnium aluminate(HfAl_(x)O_(y) (x>0, y>0)), or lanthanum oxide, gate leakage current canbe reduced. The gate insulating film 112 can be formed to have asingle-layer structure or a stacked structure using any of the abovematerials.

In the case where the gate insulating film 112 has a single-layerstructure, a 200-nm-thick silicon oxynitride film may be used.

In the case where the gate insulating film 112 has a stacked structure,a 50-nm-thick silicon nitride film and a 200-nm-thick silicon oxynitridefilm may be stacked. With use of the silicon nitride film, penetrationof metal (such as copper, sodium, or lithium), water, or the like fromthe substrate or the gate electrode layer 106 into an oxidesemiconductor film formed later can be suppressed.

The oxide semiconductor film 114 contains at least indium. Inparticular, indium and zinc are preferably contained. Further, as astabilizer for reducing variations in electric characteristics of thetransistor, in addition to indium and/or zinc, one or more elementsselected from gallium (Ga), tin (Sn), hafnium (Hf), aluminum (Al), andzirconium (Zr) are contained.

Note that here, for example, an In—Ga—Zn-based oxide means an oxidecontaining In, Ga, and Zn as its main component, in which there is noparticular limitation on the ratio of In:Ga:Zn. The In—Ga—Zn-based oxidemay contain a metal element other than In, Ga, and Zn.

The oxide semiconductor film 114 may be in a non-single-crystal state,for example. The non-single-crystal state is, for example, structured byat least one of c-axis aligned crystal (CAAC), polycrystal,microcrystal, and an amorphous part. The density of defect states of anamorphous part is higher than those of microcrystal and CAAC. Thedensity of defect states of microcrystal is higher than that of CAAC.Note that an oxide semiconductor including CAAC is referred to as aCAAC-OS (c-axis aligned crystalline oxide semiconductor).

For example, an oxide semiconductor film may include a CAAC-OS. In theCAAC-OS, for example, c-axes are aligned, and a-axes and/or b-axes arenot macroscopically aligned.

For example, an oxide semiconductor film may include microcrystal. Notethat an oxide semiconductor including microcrystal is referred to as amicrocrystalline oxide semiconductor. A microcrystalline oxidesemiconductor film includes microcrystal (also referred to asnanocrystal) with a size greater than or equal to 1 nm and less than 10nm, for example. Alternatively, a microcrystalline oxide semiconductorfilm, for example, includes a crystal-amorphous mixed phase structurewhere crystal parts (each of which is greater than or equal to 1 nm andless than 10 nm) are distributed.

For example, an oxide semiconductor film may include an amorphous part.Note that an oxide semiconductor including an amorphous part is referredto as an amorphous oxide semiconductor. An amorphous oxide semiconductorfilm, for example, has disordered atomic arrangement and no crystallinecomponent. Alternatively, an amorphous oxide semiconductor film is, forexample, absolutely amorphous and has no crystal part.

Note that an oxide semiconductor film may be a mixed film including anyof a CAAC-OS, a microcrystalline oxide semiconductor, and an amorphousoxide semiconductor. The mixed film, for example, includes a region ofan amorphous oxide semiconductor, a region of a microcrystalline oxidesemiconductor, and a region of a CAAC-OS. Further, the mixed film mayhave a stacked structure including a region of an amorphous oxidesemiconductor, a region of a microcrystalline oxide semiconductor, and aregion of a CAAC-OS, for example.

Note that an oxide semiconductor film may be in a single-crystal state,for example.

An oxide semiconductor film preferably includes a plurality of crystalparts. In each of the crystal parts, a c-axis is preferably aligned in adirection parallel to a normal vector of a surface where the oxidesemiconductor film is formed or a normal vector of a surface of theoxide semiconductor film. Note that, among crystal parts, the directionsof the a-axis and the b-axis of one crystal part may be different fromthose of another crystal part. An example of such an oxide semiconductorfilm is a CAAC-OS film.

The CAAC-OS film is not absolutely amorphous. The CAAC-OS film, forexample, includes an oxide semiconductor with a crystal-amorphous mixedphase structure where crystal parts and amorphous parts areintermingled. Note that in most cases, the crystal part fits inside acube whose one side is less than 100 nm. In an image obtained with atransmission electron microscope (TEM), a boundary between an amorphouspart and a crystal part and a boundary between crystal parts in theCAAC-OS film are not clearly detected. Further, with the TEM, a grainboundary in the CAAC-OS film is not clearly found. Thus, in the CAAC-OSfilm, a reduction in electron mobility due to the grain boundary issuppressed.

In each of the crystal parts included in the CAAC-OS film, for example,a c-axis is aligned in a direction parallel to a normal vector of asurface where the CAAC-OS film is formed or a normal vector of a surfaceof the CAAC-OS film. Further, in each of the crystal parts, metal atomsare arranged in a triangular or hexagonal configuration when seen fromthe direction perpendicular to the a-b plane, and metal atoms arearranged in a layered manner or metal atoms and oxygen atoms arearranged in a layered manner when seem from the direction perpendicularto the c-axis. Note that, among crystal parts, the directions of thea-axis and the b-axis of one crystal part may be different from those ofanother crystal part. In this specification, a term “perpendicular”includes a range from 80° to 100°, preferably from 85° to 95°. Inaddition, a term “parallel” includes a range from −10° to 10°,preferably from −5° to 5°.

In the CAAC-OS film, distribution of crystal parts is not necessarilyuniform. For example, in the formation process of the CAAC-OS film, inthe case where crystal growth occurs from a surface side of the oxidesemiconductor film, the proportion of crystal parts in the vicinity ofthe surface of the oxide semiconductor film is higher than that in thevicinity of the surface where the oxide semiconductor film is formed insome cases. Further, when an impurity is added to the CAAC-OS film, thecrystal part in a region to which the impurity is added becomesamorphous in some cases.

Since the c-axes of the crystal parts included in the CAAC-OS film arealigned in the direction parallel to a normal vector of a surface wherethe CAAC-OS film is formed or a normal vector of a surface of theCAAC-OS film, the directions of the c-axes may be different from eachother depending on the shape of the CAAC-OS film (the cross-sectionalshape of the surface where the CAAC-OS film is formed or thecross-sectional shape of the surface of the CAAC-OS film). Note that thefilm deposition is accompanied with the formation of the crystal partsor followed by the formation of the crystal parts throughcrystallization treatment such as heat treatment. Hence, the c-axes ofthe crystal parts are aligned in the direction parallel to a normalvector of the surface where the CAAC-OS film is formed or a normalvector of the surface of the CAAC-OS film.

In a transistor using the CAAC-OS film, change in electriccharacteristics due to irradiation with visible light or ultravioletlight is small. Thus, the transistor has high reliability.

Note that in this embodiment, the case where the oxide semiconductorfilm 114 is a CAAC-OS film is described; however, the oxidesemiconductor film 114 may be a single crystal, polycrystal, oramorphous film.

It is preferable that the oxide semiconductor film 114 be highlypurified by reducing impurities and oxygen vacancies. The highlypurified oxide semiconductor (purified OS) is an i-type (intrinsic)semiconductor or a substantially i-type semiconductor. Therefore, atransistor including the above oxide semiconductor in a region where achannel is formed has such characteristics that the amount of off-statecurrent is extremely small and the threshold voltage is less likely toshift in the negative direction (i.e., normally-off characteristics arelikely to be obtained).

Specifically, the concentration of hydrogen in the oxide semiconductorfilm 114 that is measured by secondary ion mass spectrometry (SIMS) islower than 5×10¹⁸/cm³, preferably lower than or equal to 5×10¹⁷/cm³,further preferably lower than or equal to 1×10¹⁶/cm³. The carrierdensity of the oxide semiconductor film, which can be measured by Halleffect measurement, is lower than 1×10¹⁴/cm³, preferably lower than1×10¹²/cm³, further preferably lower than 1×10¹¹/cm³. Furthermore, theband gap of the oxide semiconductor is 2 eV or more, preferably 2.5 eVor more, further preferably 3 eV or more. When the oxide semiconductorthat is highly purified by sufficiently reducing the impurityconcentration and reducing oxygen vacancies is used for a channelformation region, the off-state current of the transistor can bedecreased, and the threshold voltage can be less likely to shift in thenegative direction (i.e., normally-off characteristics can be obtained).

When impurities and oxygen vacancies in the oxide semiconductor film 114are reduced, generation of carriers can be suppressed. By suppressing anincrease in carrier density, a shift of the threshold voltage in thenegative direction can be decreased. Note that, at an end portion of theoxide semiconductor film 114, impurities tend to be concentrated andoxygen is easily released; accordingly, the carrier density tends toincrease.

Thus, in the case where a source electrode and a drain electrode of atransistor are electrically connected to the outer edge portion of theoxide semiconductor film, current may flow through the outer edgeportion of the oxide semiconductor film.

In one embodiment of the present invention, as illustrated in FIGS. 1Aand 1B, the outer edge portion of the drain electrode layer 116 a ispositioned on the inner side than the outer edge portion of the gateelectrode layer 106, so that the drain electrode layer 116 a and theouter edge portion of the oxide semiconductor film 114 are notelectrically connected. Thus, the drain electrode layer 116 a is notaffected by the outer edge portion of the oxide semiconductor film 114.As a result, the threshold voltage of the transistor 201 can beprevented from shifting in the negative direction.

The drain electrode layer 116 a and the source electrode layer 116 b canbe formed using a metal material such as molybdenum, titanium, tantalum,tungsten, aluminum, copper, chromium, neodymium, or scandium or an alloymaterial containing any of these materials as its main component can beused. Alternatively, the drain electrode layer 116 a and the sourceelectrode layer 116 b can be formed using a metal nitride material suchas tungsten nitride, tantalum nitride, titanium nitride, or molybdenumnitride. Further alternatively, the drain electrode layer 116 a and thesource electrode layer 116 b can be formed using a conductive materialsuch as indium oxide-tin oxide, indium oxide including tungsten oxide,indium zinc oxide including tungsten oxide, indium oxide includingtitanium oxide, indium tin oxide including titanium oxide, indiumoxide-zinc oxide, or indium tin oxide to which silicon oxide is added.The drain electrode layer 116 a and the source electrode layer 116 bhave either a single-layer structure or a stacked structure.

In the case where a copper film or an aluminum film is used for part ofthe drain electrode layer 116 a and the source electrode layer 116 b, itis preferable to provide a barrier layer for preventing copper oraluminum from reaching the oxide semiconductor film 114. As the barrierlayer for blocking transfer of copper or aluminum, a tantalum nitridefilm, a tungsten film, a tungsten nitride film, a molybdenum film, amolybdenum nitride film, a titanium film, a titanium nitride film, achromium film, or a chromium nitride film can be given. The barrierlayer is formed using a film selected from the above-mentioned films asappropriate to be in contact with the copper film or the aluminum film,whereby copper or aluminum can be prevented from reaching the oxidesemiconductor film 114.

In the transistor 201 in FIGS. 1A and 1B, the source electrode layer 116b is provided to face one side of the drain electrode layer 116 a sothat the channel region 114 a is a rectangle when seen from above;however, it is not limited thereto. For example, the source electrodelayer 116 b may be provided to face one side of the drain electrodelayer 116 a so that the channel region is a trapezoid when seen fromabove.

Further, an opening portion is provided in the gate electrode layer 106in the transistor 201 in FIGS. 1A and 1B. When the drain electrode layer116 a is provided so as to overlap an inner edge portion of the gateelectrode layer 106 in this manner, parasitic capacitance between thegate electrode layer 106 and the drain electrode layer 116 a can bereduced. “The drain electrode layer 116 a is provided so as to overlapan inner edge portion of the gate electrode layer 106” can also bereferred to as “the drain electrode layer 116 a is provided so as tooverlap an opening portion in the gate electrode layer 106”.

In a transistor according to one embodiment of the present invention, asin the transistor 202 in FIGS. 2A and 2B, the source electrode layers116 b may be provided to face two sides of the drain electrode layer 116a. When the source electrode layers 116 b are provided so as to face twoor more sides of the drain electrode layer 116 a, the channel width ofthe transistor can be increased.

As in the transistor 202 in FIGS. 2A and 2B, the gate electrode layer106 without an opening portion may be provided.

As in the transistor 203 in FIGS. 3A and 3B, the source electrode layers116 b may be provided so as to face three or more sides of the drainelectrode layer 116 a. When the source electrode layers 116 b areprovided so as to face three or more sides of the drain electrode layer116 a, the channel width of the transistor can be further increased.

As in the transistor 204 in FIGS. 4A and 4B, planar shapes of the gateelectrode layer 106, the oxide semiconductor film 114, the drainelectrode layer 116 a, and the source electrode layer 116 b may becircular.

As in the transistor 205 in FIGS. 5A and 5B, the outer edge portion ofthe gate electrode layer 106 may be positioned so as to be on an outerside than the outer edge portion of the oxide semiconductor film 114.

In a transistor having any of the structures illustrated in FIGS. 2A and2B, FIGS. 3A and 3B, FIGS. 4A and 4B, and FIGS. 5A and 5B, an increasein area can be suppressed even when the channel width is increased,unlike a transistor in which only one side of a drain electrode facesone side of a source electrode. Thus, any of the transistors illustratedin FIGS. 2A and 2B, FIGS. 3A and 3B, FIGS. 4A and 4B, and FIGS. 5A and5B is preferably used for a transistor with a large channel width,particularly.

Further, although in each of the transistor 201 to the transistor 205,the drain electrode layer 116 a and the source electrode layer 116 bhave a single-layer structure, they are not limited thereto. Forexample, the drain electrode layer 116 a and the source electrode layer116 b in which a plurality of layers are stacked may be employed, asillustrated in FIGS. 6A and 6B.

For example, as illustrated in FIG. 6A, the drain electrode layer 116 amay be formed by stacking three layers of a conductive layer 140 a, aconductive layer 142 a, and a conductive layer 144 a. Like the drainelectrode layer 116 a, the source electrode layer 116 b may be formed bystacking three layers of a conductive layer 140 b, a conductive layer142 b, and a conductive layer 144 b.

For example, in a transistor 206 in FIG. 6A, a 50-nm-thick tungstenlayer is used for the conductive layer 140 a and the conductive layer140 b, a 400-nm-thick aluminum layer is used for the conductive layer142 a and the conductive layer 142 b, and a 100-nm-thick titanium layeris used for the conductive layer 144 a and the conductive layer 144 b,and they are stacked, so that the drain electrode layer 116 a and thesource electrode layer 116 b can be formed.

In the case where only copper is used for the drain electrode layer 116a and the source electrode layer 116 b, for example, wiring resistancecan be reduced. However, there is concern that adhesiveness with theoxide semiconductor film 114 is not be sufficiently obtained or thatcopper enters the oxide semiconductor film 114 and serves as an impuritydegrading electric characteristics. Further, in the case where onlyaluminum is used for the drain electrode layer 116 a and the sourceelectrode layer 116 b, wiring resistance can be reduced; however, thereis concern that an aluminum oxide film is formed at an interface betweenthe aluminum and the oxide semiconductor film 114, which causesdifficulty in electrical connection.

Thus, copper or aluminum is used for the conductive layers 142 a and 142b, and the conductive layers 140 a and 140 b and the conductive layers144 a and 144 b are provided so that the conductive layers 142 a and 142b are sandwiched therebetween. With such a structure, wiring resistancecan be reduced, adhesiveness can be secured, and an impurity can beprevented from reaching the oxide semiconductor film 114, so thatfavorable electrical connection can be obtained.

Further, as illustrated in FIG. 6B, the source electrode layer 116 b mayhave such a structure that the conductive layer 140 b and the conductivelayer 144 b are provided to seal the conductive layer 142 b. With such astructure, metal used for the conductive layer 142 b can be furtherprevented from reaching the oxide semiconductor film 114. In this case,the conductive layer 140 b and the conductive layer 144 b function as abarrier layer with respect to the conductive layer 142 b.

Note that although the drain electrode layer 116 a in FIG. 6B has atwo-layer structure including the conductive layer 140 a and theconductive layer 144 a, it is not limited thereto. Like the sourceelectrode layer 116 b, the drain electrode layer 116 a may have astructure in which the conductive layer 142 a is sealed with theconductive layer 140 a and the conductive layer 144 a.

For example, in a transistor 207 in FIG. 6B, tungsten, copper, tantalumnitride are stacked as the conductive layer 140 b, the conductive layer142 b, and the conductive layer 144 b, respectively, so that the sourceelectrode layer 116 b can be formed.

Furthermore, each of the conductive layer 140 a, the conductive layer140 b, the conductive layer 142 b, the conductive layer 144 a, and theconductive layer 144 b may have a stacked structure.

For example, the drain electrode layer 116 a may have a structure inwhich a stack of tungsten and tungsten nitride is used for theconductive layer 140 a, copper is used for the conductive layer 142 a,and tantalum nitride is used for the conductive layer 144 a.

The gate electrode layer 106 may have a stacked structure similar to thestacked structures of the source electrode layer 116 b and the drainelectrode layer 116 a illustrated in FIGS. 6A and 6B.

As in a transistor 208 illustrated in FIG. 6C, the thickness of theoxide semiconductor film 114 may be differ according to regions: thethicknesses of regions overlapping with the source electrode layer 116 band the drain electrode layer 116 a are larger than the thickness of aregion overlapping with neither the source electrode layer 116 b nor thedrain electrode layer 116 a. Further, an opening portion may be providedat the center of the oxide semiconductor film 114.

Further, a transistor according to this embodiment may havecharacteristics obtained by combining part of characteristics of thetransistor 201 to the transistor 208 in FIGS. 1A and 1B, FIGS. 2A and2B, FIGS. 3A and 3B, FIGS. 4A and 4B, FIGS. 5A and 5B, and FIGS. 6A to6C.

Embodiment 2

In this embodiment, an example of a method for manufacturing thesemiconductor device illustrated in FIGS. 2A and 2B will be describedwith reference to FIGS. 7A to 7E, FIGS. 8A to 8D, and FIGS. 9A to 9C. Inaddition, an example of a method for forming a wiring connection portionis illustrated on the right side in each of the drawings.

First, the substrate 100 having an insulating surface is prepared.

There is no particular limitation on the substrate that can be used asthe substrate 100 as long as it has heat resistance enough to withstandheat treatment performed later. For example, a glass substrate of bariumborosilicate glass, aluminoborosilicate glass, or the like, a ceramicsubstrate, a quartz substrate, a sapphire substrate, or the like can beused. A single crystal semiconductor substrate or a polycrystallinesemiconductor substrate of silicon, silicon carbide, or the like; acompound semiconductor substrate of silicon germanium or the like; anSOI substrate; or the like can be used as the substrate 100. Any ofthese substrates provided with a semiconductor element may be used asthe substrate 100.

The semiconductor device may be manufactured using a flexible substrateas the substrate 100. To manufacture a flexible semiconductor device,the transistor 201 including the oxide semiconductor film 114 may bedirectly formed over a flexible substrate; or alternatively, thetransistor 201 including the oxide semiconductor film 114 may be formedover a substrate and then separated and transferred to a flexiblesubstrate. Note that in order to separate the transistor from theformation substrate and transfer it to the flexible substrate, aseparation layer (e.g., tungsten) is preferably provided between theformation substrate and the transistor 201 including the oxidesemiconductor film 114.

Next, an insulating film functioning as a base film may be formed overthe substrate 100. The insulating film can be formed by a PECVD methodor a sputtering method to have a single-layer structure or a stackedstructure using an oxide insulating material of silicon oxide, siliconoxynitride, aluminum oxide, aluminum oxynitride, hafnium oxide, galliumoxide, or the like; a nitride insulating material of silicon nitride,silicon nitride oxide, aluminum nitride, or aluminum nitride oxide; or amixed material of any of the above materials.

As the insulating film, a stacked structure including a silicon nitridefilm and a silicon oxynitride film is preferably used, for example. Withuse of the silicon nitride film, metal, hydrogen, or the like can beprevented from reaching an oxide semiconductor film formed in a laterstep from the substrate.

Next, a conductive film which is to be a gate electrode layer (includinga wiring formed using the same layer as the gate electrode layer) isformed over the substrate 100.

The conductive film can be formed by a sputtering method or a PECVDmethod. For formation of the conductive film, a metal material such asmolybdenum, titanium, tantalum, tungsten, aluminum, copper, chromium,neodymium, or scandium, or an alloy material containing any of thesematerials as a main component can be used. Further, the conductive filmcan be formed using a conductive material such as indium oxide-tinoxide, indium oxide including tungsten oxide, indium zinc oxideincluding tungsten oxide, indium oxide including titanium oxide, indiumtin oxide including titanium oxide, indium oxide-zinc oxide, or indiumtin oxide to which silicon oxide is added. In addition, the conductivefilm is formed to have a single-layer structure or a stacked structureusing any of the above conductive materials.

In the case where the conductive film is formed with a single-layerstructure, a 100-nm-thick tungsten film may be formed, for example.

In the case where the conductive film is formed to have a stackedstructure including two layers, a 30-nm-thick tantalum nitride film anda 200-nm-thick copper film may be stacked, for example. With use of thecopper film, wiring resistance can be reduced. Instead of the30-nm-thick tantalum nitride film, a tungsten film, a tungsten nitridefilm, a molybdenum nitride film, or a titanium nitride film may be used.Further, instead of the 200-nm-thick copper film, a tungsten film may beused.

In the case where the conductive film has a stacked structure includingthree layers, a 30-nm-thick tantalum nitride film, a 200-nm-thick copperfilm, and a 30-nm-thick tungsten film may be stacked. Further, insteadof the 30-nm-thick tantalum nitride film, a tungsten film, a tungstennitride film, a molybdenum nitride film, or a titanium nitride film maybe used. Alternatively, instead of the 30-nm-thick tungsten film, amolybdenum film may be formed. With use of the copper film, wiringresistance can be reduced. With a structure in which the tungsten filmor the molybdenum film is stacked over the copper film, copper can beprevented from reaching the oxide semiconductor film 114.

In addition, tungsten and molybdenum have a relatively high workfunction; thus, it is preferable to use the tungsten film or themolybdenum film for the gate electrode layer because the thresholdvoltage of the transistor is likely to be positive (i.e., a normally-offtransistor is likely to be formed). Note that when the gate insulatingfilm formed in a later step has a function of preventing copper fromreaching the oxide semiconductor film 114, either the tungsten film orthe molybdenum film is not necessarily formed.

Next, by a photolithography step, a resist mask is formed over theconductive film, and selective etching is performed, so that the gateelectrode layer 106 is formed as illustrated in FIG. 7A. In thisembodiment, a stacked layer of a 30-nm-thick tantalum nitride film and a200-nm-thick copper film is formed as the gate electrode layer 106.

After the gate electrode layer 106 is formed, the resist mask isremoved. Note that the conductive film may be etched using either dryetching or wet etching, or using both dry etching and wet etching.

When the resist mask is removed, contamination may be generated in somecases. Treatment for removing the generated contamination (the treatmentis also referred to as impurity-removing treatment) may be performed.For the impurity-removing treatment, plasma treatment using oxygen,dinitrogen monoxide, or a rare gas (typically argon); solution treatmentusing diluted hydrofluoric acid, water, a developer, or a TMAH solution;or the like can be favorably employed.

Further, in the step of forming the gate electrode layer 106, a wiring107 can also be formed in a wiring connection portion.

Next, heat treatment may be performed on the substrate 100 and the gateelectrode layer 106. For example, the heat treatment may be performedwith an electric furnace at a temperature higher than or equal to 350°C. and lower than or equal to 500° C. for 30 minutes to 1 hour. The heattreatment enables removal of hydrogen, water, or the like in thesubstrate 100 or the gate electrode layer 106.

Further, a heat treatment apparatus used is not limited to an electricfurnace, and a device for heating an object to be processed by heatconduction or heat radiation from a heating element such as a resistanceheating element may be alternatively used. For example, a rapid thermalannealing (RTA) apparatus such as a gas rapid thermal annealing (GRTA)apparatus or a lamp rapid thermal annealing (LRTA) apparatus can beused. An LRTA apparatus is an apparatus for heating an object to beprocessed by radiation of light (an electromagnetic wave) emitted from alamp such as a halogen lamp, a metal halide lamp, a xenon arc lamp, acarbon arc lamp, a high pressure sodium lamp, or a high pressure mercurylamp. A GRTA apparatus is an apparatus for heat treatment using ahigh-temperature gas. As the high-temperature gas, an inert gas whichdoes not react with an object to be processed by heat treatment, such asnitrogen or a rare gas like argon, is used. For example, in the case ofusing a GRTA apparatus, the heat treatment may be performed at 650° C.for 1 minute to 5 minutes.

Next, as illustrated in FIG. 7B, the gate insulating film 112 is formedover the gate electrode layer 106.

To improve the coverage with the gate insulating film 112, planarizationtreatment may be performed on a surface of the gate electrode layer 106.In the case of using a thin insulating film as the gate insulating film112 in particular, it is preferable that the flatness of the surface ofthe gate electrode layer 106 be good.

The gate insulating film 112 is formed to have a thickness greater thanor equal to 1 nm and less than or equal to 300 nm by a sputteringmethod, a molecular beam epitaxy (MBE) method, a CVD method such as anLPCVD method, a PECVD method, or a mist CVD method, a pulsed laserdeposition method, an atomic layer deposition (ALD) method, or the likeas appropriate.

The gate insulating film 112 can be formed using silicon oxide, galliumoxide, aluminum oxide, silicon nitride, silicon oxynitride, aluminumoxynitride, or silicon nitride oxide. When the gate insulating film 112is formed using a high-k material such as hafnium oxide, yttrium oxide,hafnium silicate (HfSi_(x)O_(y) (x>0, y>0)), hafnium silicate to whichnitrogen is added (HfSiO_(x)N_(y) (x>0, y>0)), hafnium aluminate(HfAl_(x)O_(y) (x>0, y>0)), or lanthanum oxide, the amount of gateleakage current can be reduced. The gate insulating film 112 can beformed to have a single-layer structure or a stacked structure using anyof the above materials.

In the case where the gate insulating film 112 is formed with asingle-layer structure, a 200-nm-thick silicon oxynitride film may beformed, for example.

Alternatively, in the case where the gate insulating film 112 is formedwith a stacked structure, for example, a 50-nm-thick silicon nitridefilm and a 200-nm-thick silicon oxynitride film may be formed. With useof the silicon nitride film, metal (such as copper, sodium, or lithium),water, or the like can be prevented from entering an oxide semiconductorfilm formed in a later step from the substrate or the gate electrodelayer 106.

The 50-nm-thick silicon nitride film in this case can be formed, forexample, by a PECVD method under the following conditions: the gas flowratio of SiH₄/N₂ is 50 sccm/5000 sccm; the deposition power when theelectrode area is 6000 cm² is 150 W (RF); the deposition pressure is 40Pa; and the substrate temperature is 350° C. The 200-nm-thick siliconoxynitride film can be formed, for example, by a PECVD method under thefollowing conditions: the gas flow rate ratio of SiH₄/N₂O is 20sccm/3000 sccm; the deposition power when the electrode area is 6000 cm²is 100 W (RF); the deposition pressure is 40 Pa; and the substratetemperature is 350° C.

Further, the RF power supply (power supply output) may be made higher.For example, the RF power supply when the electrode area is 6000 cm² maybe 300 W or higher, 500 W or higher, or 1000 W or higher. By increasingthe RF power supply (power supply output), the dense gate insulatingfilm 112 can be formed, which can prevent entry of impurities into theoxide semiconductor film formed in a later step.

Next, the substrate 100, the gate electrode layer 106, and the gateinsulating film 112 may be subjected to heat treatment. For example, theheat treatment may be performed with a GRTA apparatus at 650° C. for 1minute to 10 minutes. Alternatively, depending on an electric furnace,the heat treatment may be performed at a temperature higher than orequal to 350° C. and lower than or equal to 500° C. for 30 minutes to 1hour. The heat treatment enables removal of hydrogen, water, or the likecontained in the gate insulating film 112.

Next, treatment for adding oxygen (also referred to as oxygen additiontreatment or oxygen implantation treatment) may be performed on the gateinsulating film 112. By oxygen addition treatment, an oxygen excessregion is formed in the gate insulating film 112.

Oxygen contains at least any of an oxygen radical, ozone, an oxygenatom, and an oxygen ion (an oxygen molecular ion and/or an oxygencluster ion). By the oxygen addition treatment performed on thedehydrated or dehydrogenated gate insulating film 112, oxygen can becontained in the gate insulating film 112 to compensate for oxygen whichhas been released by the above heat treatment, and an oxygen excessregion can be formed.

Addition of oxygen to the gate insulating film 112 can be performed byan ion implantation method, an ion doping method, a plasma immersion ionimplantation method, plasma treatment, or the like, for example. Notethat for the ion implantation method, a gas cluster ion beam may beused. The oxygen addition treatment may be performed for the entiresurface of the substrate 100 by one step or may be performed using alinear ion beam (an ion beam of which irradiation surface is a linearshape), for example. In the case where the linear ion beam is used, thesubstrate or the ion beam is relatively moved (scanned), whereby oxygencan be added to the entire surface of the gate insulating film 112.Further, as plasma treatment, ashing treatment may be used.

As a gas for supplying oxygen, a gas containing O may be used; forexample, an O₂ gas, an N₂O gas, a CO₂ gas, a CO gas, or an NO₂ gas maybe used. Note that a rare gas (e.g., argon) may be contained in a gasfor supplying oxygen.

Further, in the case where an ion implantation method is used for addingoxygen, the dose of the oxygen is preferably greater than or equal to1×10¹³ ions/cm² and less than or equal to 5×10¹⁶ ions/cm². The contentof oxygen in the gate insulating film 112 after the oxygen additiontreatment preferably exceeds that of the stoichiometric composition ofthe gate insulating film 112. Note that such a region containing oxygenin excess of the stoichiometric composition may exist in part of thegate insulating film 112. The depth at which oxygen is implanted may beadjusted as appropriate by implantation conditions.

The gate insulating film 112 containing excess oxygen, which serves asan oxygen supply source, may be provided so as to be in contact with anoxide semiconductor film 113 formed later, whereby oxygen is releasedfrom the gate insulating film 112 by heat treatment performed in a laterstep and can be supplied to the oxide semiconductor film 113. Thus,oxygen vacancies in the oxide semiconductor film 113 can be reduced.

Note that the timing of oxygen addition treatment performed on the gateinsulating film 112 may be before the gate insulating film 112 is heatedor before and after the gate insulating film 112 is heated.

Next, by a photolithography step, a resist mask is formed over the gateinsulating film 112, and selective etching is performed, so that anopening is formed in a region that is to be a wiring connection portionof the gate insulating film 112 as illustrated in FIG. 7C.

Next, the oxide semiconductor film 113 is formed over the gateinsulating film 112 (see FIG. 7D).

The oxide semiconductor film 113 can be formed by a sputtering method, amolecular beam epitaxy (MBE) method, a CVD method such as an LPCVDmethod, a PECVD method, or a mist CVD method, a pulsed laser depositionmethod, an ALD method, or the like as appropriate.

An oxide semiconductor used for the semiconductor film 113 contains atleast indium (In). In particular, In and zinc (Zn) are preferablycontained. The oxide semiconductor preferably contains, in addition toIn and/or Zn, gallium (Ga) serving as a stabilizer that reducesvariations in electric characteristics among transistors using theabove-described oxide. It is preferable that one or more elementsselected from tin (Sn), hafnium (Hf), aluminum (Al), and zirconium (Zr)be contained as a stabilizer.

As another stabilizer, one or plural kinds of lanthanoid such aslanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium(Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy),holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), or lutetium(Lu) may be contained.

As the oxide semiconductor, for example, a three-component metal oxidesuch as an In—Ga—Zn-based oxide (also referred to as IGZO), anIn—Al—Zn-based oxide, an In—Sn—Zn-based oxide, an In—Hf—Zn-based oxide,an In—La—Zn-based oxide, an In—Ce—Zn-based oxide, an In—Pr—Zn-basedoxide, an In—Nd—Zn-based oxide, an In—Sm—Zn-based oxide, anIn—Eu—Zn-based oxide, an In—Gd—Zn-based oxide, an In—Tb—Zn-based oxide,an In—Dy—Zn-based oxide, an In—Ho—Zn-based oxide, an In—Er—Zn-basedoxide, an In—Tm—Zn-based oxide, an In—Yb—Zn-based oxide, or anIn—Lu—Zn-based oxide; or a four-component metal oxide such as anIn—Sn—Ga—Zn-based oxide, an In—Hf—Ga—Zn-based oxide, anIn—Al—Ga—Zn-based oxide, an In—Sn—Al—Zn-based oxide, anIn—Sn—Hf—Zn-based oxide, or an In—Hf—Al—Zn-based oxide can be used.

Note that although the oxide semiconductor film 113 with a single-layerstructure is formed in FIG. 7D, an oxide semiconductor film with astacked structure may be formed. For example, oxide semiconductor filmswhose constituent elements are different may be stacked, oxidesemiconductor films which contain the same constituent elements but havedifferent compositions from each other may be stacked, or oxidesemiconductor films whose hydrogen concentrations are different fromeach other may be stacked.

Further, the oxide semiconductor film 113 is preferably a CAAC-OS(c-axis aligned crystalline oxide semiconductor) film. Further, theoxide semiconductor film 113 may be single crystal or polycrystalline(also referred to as polycrystal).

In an oxide semiconductor film having a crystal part as the CAAC-OSfilm, defects in the bulk can be further reduced and when a surfaceflatness is improved, carrier mobility higher than that of an oxidesemiconductor in an amorphous state can be obtained. In order to improvethe surface flatness, the oxide semiconductor film 113 is preferablyformed on a flat surface. Specifically, the oxide semiconductor film ispreferably formed on a surface with an average surface roughness (Ra)less than or equal to 1 nm, preferably less than or equal to 0.3 nm,further preferably less than or equal to 0.1 nm.

Note that Ra is obtained by expanding, into three dimensions, arithmeticmean surface roughness that is defined by JIS B 0601: 2001(ISO4287:1997) so as to be able to apply it to a curved surface. Ra canbe expressed as an “average value of the absolute values of deviationsfrom a reference surface to a specific surface” and is defined by thefollowing formula.

${Ra} = {\frac{1}{S_{0}}{\int_{y_{1}}^{y_{2}}{\int_{x_{1}}^{x_{2}}{{{{f\left( {x,y} \right)} - Z_{0}}}{x}{y}}}}}$

Here, the specific surface is a surface which is a target of roughnessmeasurement, and is a quadrilateral region which is specified by fourpoints represented by the coordinates (x₁, y₁, f(x₁, y₁)), (x₁, y₂,f(x₁, y₂)), (x₂, y₁, f(x₂, y₁)), and (x₂, y₂, f(x₂, y₂)). So representsthe area of a rectangle which is obtained by projecting the specificsurface on the xy plane, and Z₀ represents the height of the referencesurface (the average height of the specific surface). Ra can be measuredusing an atomic force microscope (AFM).

In order to improve the planarity of the surface where the oxidesemiconductor film 113 is formed, planarization treatment is preferablyperformed on a region which is in the gate insulating film 112 and whichis in contact with the oxide semiconductor film 113. The planarizationtreatment may be, but not particularly limited to, polishing treatment(such as chemical mechanical polishing (CMP)), dry etching treatment, orplasma treatment.

As plasma treatment, reverse sputtering in which an argon gas isintroduced and plasma is generated can be performed. The reversesputtering is a method in which voltage is applied to a substrate sidewith use of an RF power source in an argon atmosphere and plasma isgenerated in the vicinity of the substrate so that a substrate surfaceis modified. Note that instead of an argon atmosphere, a nitrogenatmosphere, a helium atmosphere, an oxygen atmosphere, or the like maybe used. With the reverse sputtering, particle substances (also referredto as particles or dust) attached to the surface of the gate insulatingfilm 112 can be removed.

As the planarization treatment, polishing treatment, dry etchingtreatment, or plasma treatment may be performed plural times, or thesetreatments may be performed in combination. In the case where thetreatments are performed in combination, there is no particularlimitation on the order of steps and the order can be set as appropriatedepending on the roughness of the surface of the gate insulating film112.

The thickness of the oxide semiconductor film 113 is preferably greaterthan or equal to 1 nm and less than or equal to 200 nm, furtherpreferably greater than or equal to 5 nm and less than or equal to 50 nmThe oxide semiconductor film 113 can be deposited by a sputteringmethod, an MBE method, a CVD method, a pulsed laser deposition method,an ALD method, or the like as appropriate.

Further, the concentration of hydrogen or water contained in the oxidesemiconductor film 113 is preferably as low as possible. This is becauseif the concentration of hydrogen is high, by a bond of hydrogen and anelement contained in an oxide semiconductor, electrons serving ascarriers are generated in some cases.

Therefore, in order to make the oxide semiconductor film 113 containimpurities as little as possible in the step for forming the oxidesemiconductor film 113, it is preferable to preheat the substrateprovided with the gate insulating film 112 in a preheating chamber of asputtering apparatus as pretreatment for formation of the oxidesemiconductor film 113 so that impurities in the substrate and the gateinsulating film 112 are detached and removed. As an evacuation unit, acryopump is preferably provided in the preheating chamber.

The oxide semiconductor film 113 is preferably formed under such acondition that much oxygen is contained (for example, by a sputteringmethod in an atmosphere where the proportion of oxygen is 30% to 100%)so as to be a film containing much oxygen (preferably including a regioncontaining oxygen in excess of the stoichiometric composition of theoxide semiconductor in a crystalline state).

It is preferable to use a high purity gas from which impurities areremoved for formation of the oxide semiconductor film 113.

The substrate is held in a deposition chamber kept under reducedpressure. Then, while remaining moisture in the deposition chamber isremoved, a gas containing fewer impurities is introduced, and with useof a target described below, the oxide semiconductor film 113 isdeposited over the substrate 100 at a temperature higher than or equalto 130° C. and lower than or equal to 700° C. In order to removemoisture remaining in the deposition chamber, an entrapment vacuum pumpsuch as a cryopump, an ion pump, or a titanium sublimation pump ispreferably used. As an evacuation unit, a turbo molecular pump to whicha cold trap is added may be used. In particular, with use of a cryopumpor a cold trap, remaining moisture is efficiently removed, for example,so that the concentration of impurities in the oxide semiconductor film113 deposited in the deposition chamber can be reduced.

In this embodiment, a 35-nm-thick In—Ga—Zn-based oxide film (IGZO film)is formed as the oxide semiconductor film 113 by a sputtering methodwith a sputtering apparatus including an AC power supply device. In thisembodiment, an In—Ga—Zn-based oxide target having an atomic ratio whereIn:Ga:Zn=3:1:2 is used. The deposition conditions are as follows: theatmosphere is oxygen and argon (the proportion of oxygen is 50%); thepressure is 0.4 Pa; the electric power when the electrode area is 6000cm² is 0.5 kW; and the substrate temperature is 200° C.

It is preferable to form the gate insulating film 112 and the oxidesemiconductor film 113 successively without being exposed to the air.Successive formation of the gate insulating film 112 and the oxidesemiconductor film 113 so as not to expose the gate insulating film 112to the air can prevent impurities from being adsorbed to the surface ofthe gate insulating film 112.

Further, heat treatment for removal of excess hydrogen including wateror a hydroxyl group (dehydration or dehydrogenation) may be performed onthe oxide semiconductor film 113. The temperature of the heat treatmentis higher than or equal to 300° C. and lower than or equal to 700° C.,or lower than the strain point of the substrate. The heat treatment canbe performed under reduced pressure, or in an oxygen atmosphere, anitrogen atmosphere, or the like. Note that an oxidation gas atmospherecan also be regarded as an oxygen atmosphere. For example, an atmospherewhich contains an oxidation gas including oxygen, dinitrogen monoxide,and ozone; or ultra dry air (the moisture amount is less than or equalto 20 ppm (−55° C. by conversion into a dew point), preferably less thanor equal to 1 ppm, or further preferably less than or equal to 10 ppb,in the case where measurement is performed with use of a dew point meterof a cavity ring down laser spectroscopy (CRDS) system) may be used.

In this embodiment, with use of an electric furnace which is one of heattreatment apparatuses, the oxide semiconductor film 113 is subjected toheat treatment at 450° C. in a nitrogen atmosphere for one hour and thenat 450° C. in a mixed atmosphere of nitrogen and oxygen for one hour.

Further, a heat treatment apparatus used is not limited to an electricfurnace, and a device for heating an object to be processed by heatconduction or heat radiation from a heating element such as a resistanceheating element may be alternatively used. For example, an RTA apparatussuch as a GRTA apparatus or an LRTA apparatus can be used. For example,as the heat treatment, GRTA may be performed as follows. The substrateis put in an inert gas heated at a high temperature of 650° C. to 700°C., is heated for several minutes, and is taken out from the inert gas.

Note that in the heat treatment, it is preferable that water, hydrogen,and the like be not contained in nitrogen, oxygen, or a rare gas such ashelium, neon, or argon. The purity of gas which is introduced into theheat treatment apparatus is preferably set to be higher than or equal to6N (99.9999%), further preferably higher than or equal to 7N (99.99999%)(that is, the impurity concentration is lower than or equal to 1 ppm,preferably lower than or equal to 0.1 ppm).

Further, after heat treatment under reduced pressure or in an inertatmosphere, the oxide semiconductor film 113 may be heated in an oxygenatmosphere. In the case where in addition to removal of impurities inthe oxide semiconductor film 113, oxygen vacancies are caused by theheat treatment performed under reduced pressure or in an inertatmosphere, such oxygen vacancies in the oxide semiconductor film 113can be reduced by heat treatment performed later in an oxygenatmosphere.

The heat treatment for dehydration or dehydrogenation may be performedbefore or after the oxide semiconductor film is processed into an islandshape. The heat treatment for dehydration or dehydrogenation may beperformed plural times, and may also serve as another heat treatment. Byperforming heat treatment on the oxide semiconductor film 113, thecrystallinity in the oxide semiconductor film 113 can be increased.

When the heat treatment for dehydration or dehydrogenation is performedin the state where the gate insulating film 112 is covered with theoxide semiconductor film 113 which is not processed to have an islandshape, oxygen contained in the gate insulating film 112 can be preventedfrom being released to the outside by the heat treatment.

Next, by a photolithography step, a resist mask is formed over the oxidesemiconductor film 113, and selective etching is performed on the oxidesemiconductor film 113, so that an island-shaped oxide semiconductorfilm 114 is formed as illustrated in FIG. 7E. After the island-shapedoxide semiconductor film 114 is formed, the resist mask is removed. Aresist mask which is used in the formation of the island-shaped oxidesemiconductor film 114 may be formed by an ink-jet method. When a resistmask is formed by an inkjet method, photomasks are not used; thus, themanufacturing cost can be reduced.

The etching of the oxide semiconductor film 113 may be performed by dryetching, wet etching, or both of them. For example, an etchant used forwet etching of the oxide semiconductor film 113, a mixed solution ofphosphoric acid, acetic acid, and nitric acid, or the like can be used.Alternatively, ITO-07N (produced by KANTO CHEMICAL CO., INC.) may beused. Further alternatively, the oxide semiconductor film 113 may beetched by a dry etching method using an inductively coupled plasma (ICP)etching method.

In etching the oxide semiconductor film 113, it is preferable that theetching selectivity be set to high so as not to etch the gate insulatingfilm 112 excessively.

Next, a conductive film 116 that is to be a source electrode layer and adrain electrode layer (including a wiring formed using the same layer asthe source and drain electrode layers) in a later step is formed overthe gate insulating film 112 and the oxide semiconductor film 114 (seeFIG. 8A).

The conductive film 116 can be formed by a sputtering method or a PECVDmethod. The conductive film 116 can be formed using a metal materialsuch as molybdenum, titanium, tantalum, tungsten, aluminum, copper,chromium, neodymium, or scandium, or an alloy material containing any ofthese materials as a main component. Further, the conductive film 116can be formed using a metal nitride material such as tungsten nitride,tantalum nitride, titanium nitride, or molybdenum nitride. Furtheralternatively, the conductive film 116 can be formed using a conductivematerial such as indium oxide-tin oxide, indium oxide including tungstenoxide, indium zinc oxide including tungsten oxide, indium oxideincluding titanium oxide, indium tin oxide including titanium oxide,indium oxide-zinc oxide, or indium tin oxide to which silicon oxide isadded. The conductive film 116 is formed with a single-layer structureor a stacked structure.

In this embodiment, the conductive film 116 is formed with a three-layerstructure of a 50-nm-thick tungsten film, a 400-nm-thick copper film,and a 100-nm-thick nitride tantalum film.

Next, by a photolithography step, a resist mask is formed over theconductive film 116, and selective etching is performed, so that thesource electrode layer 116 b and the drain electrode layer 116 a areformed as illustrated in FIG. 8B. Through this step, the oxidesemiconductor film 114 is partly exposed.

Through this step, the outer edge portion of the drain electrode layer116 a is positioned on the inner side than the outer edge portion of thegate electrode layer 106. With such a structure that the outer edgeportion of the drain electrode layer 116 a is positioned on the innerside than the outer edge portion of the gate electrode layer 106, thedrain electrode layer 116 a can be prevented from being electricallyconnected to the end portion of the oxide semiconductor film 114.

Further, it is preferable to form the source electrode layer 116 b tocover part of the outer edge portion of the oxide semiconductor film114. With the source electrode layer 116 b covering the part of theouter edge portion of the oxide semiconductor film 114, entry ofimpurities into the outer edge portion of the oxide semiconductor film114 and release of oxygen from the oxide semiconductor film 114 can beprevented.

After the source electrode layer 116 b and the drain electrode layer 116a are formed as described above, the resist mask is removed.

In addition, in the step of forming the source electrode layer 116 b andthe drain electrode layer 116 a, a wiring 116 c electrically connectedto the wiring 107 can be formed in the wiring connection portion.

Note that on the surface of the oxide semiconductor film 114 which isexposed by formation of the source electrode layer 116 b and the drainelectrode layer 116 a, a constituent element of the source electrodelayer 116 b and the drain electrode layer 116 a, an element existing ina treatment chamber, or a constituent element of an etching gas used forthe etching may be attached as impurities.

Such attachment of the impurities tends to bring an increase inoff-state current of the transistor or deterioration of the electriccharacteristics of the transistor. In addition, a parasitic channel islikely to be generated in the oxide semiconductor film 114, and thuselectrodes which should be electrically isolated might be electricallyconnected through the oxide semiconductor film 114.

Thus, after the etching for forming the source electrode layer 116 b andthe drain electrode layer 116 a is finished, cleaning treatment forremoving the impurities attached on the surface and side surface of theoxide semiconductor film 114 (impurity-removing treatment) may beperformed.

The impurity-removing treatment can be performed by plasma treatment ortreatment using a solution. As the plasma treatment, oxygen plasmatreatment, dinitrogen monoxide plasma treatment, or the like can beused. In addition, a rare gas (typically argon) may be used in theplasma treatment.

Further, for the cleaning treatment using a solution, an alkalinesolution such as a TMAH solution, water, or an acidic solution such asdiluted hydrofluoric acid can be used. For example, in the case where adiluted hydrofluoric acid solution is used, 50 wt % hydrofluoric acid isdiluted with water 100 times to 100000 times, preferably 1000 times to100000 times. That is, diluted hydrofluoric acid having a concentrationof 5×10⁻⁴ wt % to 0.5 wt %, preferably 5×10⁻⁴ wt % to 5×10⁻² wt %, isused for the cleaning treatment. By the cleaning treatment, theabove-described impurities attached on the surface of the exposed oxidesemiconductor film 114 can be removed.

Further, by the impurity-removing treatment using a diluted hydrofluoricacid solution, the exposed surface of the oxide semiconductor film 114can be etched. In other words, impurities attached on the exposedsurface of the oxide semiconductor film 114 or impurities taken insideand in the vicinity of the surface of the oxide semiconductor film 114can be removed with part of the oxide semiconductor film 114. Thus, likethe oxide semiconductor film 114 in the transistor 208 illustrated inFIG. 6C, regions in the oxide semiconductor film 114 overlapping withthe source electrode layer 116 b and the drain electrode layer 116 ahave a larger thickness than a region in the oxide semiconductor film114 overlapping with neither the source electrode layer 116 b nor thedrain electrode layer 116 a.

By performing the impurity-removing treatment, the chlorineconcentration at the surface of the oxide semiconductor layer, at aconcentration peak obtained by SIMS, can be reduced to be lower than orequal to 1×10¹⁹/cm³ (preferably lower than or equal to 5×10¹⁸/cm³,further preferably lower than or equal to 1×10¹⁸/cm³). The boronconcentration can be reduced to be lower than or equal to 1×10¹⁹/cm³(preferably lower than or equal to 5×10¹⁸/cm³, further preferably lowerthan or equal to 1×10¹⁸/cm³). The aluminum concentration can be reducedto be lower than or equal to 1×10¹⁹/cm³ (preferably lower than or equalto 5×10¹⁸/cm³, further preferably lower than or equal to 1×10¹⁸/cm³).

Through the above steps, the transistor 201 can be manufactured (seeFIG. 8B).

Next, the insulating film 122 is formed over the transistor 201. Theinsulating film 122 may be formed in one step or through a plurality ofsteps. Further, films formed using different materials may be stacked toform the insulating film 122. In this embodiment, the insulating film122 in which two layers of an insulating layer 118 and an insulatinglayer 120 are stacked is formed.

First, the insulating layer 118 is formed over the source electrodelayer 116 b and the drain electrode layer 116 a to be partly in contactwith the oxide semiconductor film 114 (see FIG. 8C). The thickness ofthe insulating layer 118 is 20 nm to 50 nm The insulating layer 118 canbe formed using a material and a method similar to those of the gateinsulating film 112. For example, silicon oxide, silicon oxynitride, orthe like formed by a sputtering method or a CVD method can be used forthe insulating layer 118.

In this embodiment, a silicon oxynitride film with a thickness of 30 nmto 50 nm formed by a PECVD method is used as the insulating layer 118.The conditions for forming the insulating layer 118, for example, may beas follows: the gas flow rate ratio of SiH₄/N₂O is 20 sccm/3000 sccm;the pressure is 40 Pa; the RF power supply (power supply output) whenthe electrode area is 6000 cm² is 100 W; and the substrate temperatureis 350° C.

Next, oxygen 119 is added to the insulating layer 118, whereby theinsulating layer 118 contains excess oxygen. At least one of an oxygenradical, ozone, an oxygen atom, and an oxygen ion (including a molecularion and a cluster ion) is included in the oxygen 119. The oxygen 119 isadded by oxygen addition treatment.

The oxygen 119 may be added to the entire area of the insulating layer118 at a time. Alternatively, a linear ion beam is used for adding theoxygen 119. In the case of using the linear ion beam, the substrate 100or the ion beam is relatively moved (scanned), whereby the oxygen 119can be added into the entire area of the insulating layer 118.

As a supply gas of the oxygen 119, a gas containing oxygen atoms can beused; for example, an O₂ gas, an N₂O gas, a CO₂ gas, a CO gas, or an NO₂gas can be used. Note that a rare gas (e.g., an Ar gas) may be containedin the supply gas of the oxygen 119.

For example, in the case where oxygen is added by an ion implantationmethod, the dosage of the oxygen 119 is preferably greater than or equalto 1×10¹³ ions/cm² and less than or equal to 5×10¹⁶ ions/cm², and it ispreferable that the oxygen content of the insulating layer 118 be insubstantially excess of that of the stoichiometric composition. Notethat such a region containing oxygen in excess of the stoichiometriccomposition exists in at least part of the insulating layer 118. Thedepth at which the oxygen 119 is implanted may be adjusted asappropriate by implantation conditions.

In this embodiment, the oxygen 119 is added by plasma treatmentperformed in an oxygen atmosphere. Note that it is preferable that theinsulating layer 118 include impurities as little as possible because itis in contact with the oxide semiconductor film 114. Thus, it ispreferable to perform heat treatment for removing excess hydrogen(including water or a hydroxyl group) in the insulating layer 118 beforeoxygen is added. The temperature of the heat treatment for dehydrationor dehydrogenation is higher than or equal to 300° C. and lower than orequal to 700° C., or lower than the strain point of the substrate. Theheat treatment for dehydration or dehydrogenation can be performed in amanner similar to that of the above heat treatment.

Plasma treatment for adding the oxygen 119 (oxygen plasma treatment) isperformed under conditions where the oxygen flow rate is 250 sccm, theICP power is 0 W, the bias power is 4500 W, and the pressure is 15 Pa.In this oxygen plasma treatment, part of the oxygen 119 added to theinsulating layer 118 enters the oxide semiconductor film 114 through theinsulating layer 118. The oxygen 119 added to the oxide semiconductorfilm 114 passes through the insulating layer 118, whereby the surface ofthe oxide semiconductor film 114 is less damaged by plasma, andaccordingly, reliability of the semiconductor device can be improved.The insulating layer 118 is preferably formed to have a thicknessgreater than 10 nm and less than 100 nm. When the thickness of theinsulating layer 118 is less than or equal to 10 nm, the oxidesemiconductor film 114 is easily damaged in the oxygen plasma treatment.Alternatively, when the thickness of the insulating layer 118 is greaterthan or equal to 100 nm, the oxygen 119 added by the oxygen plasmatreatment might be insufficiently supplied to the oxide semiconductorfilm 114. The heat treatment for dehydration or dehydrogenation of theinsulating layer 118 and/or addition of the oxygen 119 may be performedplural times. The insulating layer 118 to which the oxygen 119 is addedcan function as an oxygen supply layer.

Next, the insulating layer 120 is formed over the insulating layer 118to have a thickness of 200 nm to 500 nm (see FIG. 8D). The insulatinglayer 120 can be formed using a material and a method similar to thoseof the insulating layer 102 or the gate insulating layer 104. Forexample, silicon oxide, silicon oxynitride, or the like formed by asputtering method or a CVD method can be used as the insulating layer120.

In this embodiment, a silicon oxynitride layer with a thickness of 370nm is formed by a PECVD method as the insulating layer 120. Thedeposition conditions of the insulating layer 120, for example, can beas follows: the gas flow rate ratio of SiH₄ to N₂O is 30 sccm/4000 sccm;the pressure is 200 Pa; the RF power supply (power supply output) whenthe electrode area is 6000 cm² is 150 W; and the substrate temperatureis 220° C. to 350° C.

Further, the RF power supply (power supply output) can be made higher.For example, the RF power supply when the electrode area is 6000 cm² maybe 300 W or higher, 500 W or higher, or 1000 W or higher. By increasingthe RF power supply (power supply output), the dense insulating layer120 can be formed.

Note that after the insulating layer 120 is formed, heat treatment maybe performed in an inert gas atmosphere, an oxygen atmosphere, or amixed atmosphere containing an inert gas and oxygen at a temperaturehigher than or equal to 250° C. and lower than or equal to 650° C.,preferably higher than or equal to 300° C. and lower than or equal to600° C. Specifically, the heat treatment may be performed in a mixedatmosphere containing nitrogen and oxygen. Alternatively, heat treatmentmay be performed in a nitrogen atmosphere and then in a mixed atmospherecontaining nitrogen and oxygen. By this heat treatment, the oxygenincluded in the insulating layer 118 is diffused at the interfacebetween the insulating layer 118 and the oxide semiconductor film 114,and supplied to the oxide semiconductor film 114, so that oxygenvacancies in the oxide semiconductor film 114 can be filled.

Further, oxygen may be added to the insulating layer 120, so that theinsulating layer 120 may be in an oxygen excess state. Addition ofoxygen to the insulating layer 120 may be performed in a manner similarto that of addition of oxygen to the insulating layer 118. After theoxygen is added to the insulating layer 120, heat treatment may beperformed in an inert gas atmosphere, an oxygen atmosphere, or a mixedatmosphere containing an inert gas and oxygen at a temperature higherthan or equal to 250° C. and lower than or equal to 650° C., preferablyhigher than or equal to 300° C. and lower than or equal to 600° C.

Next, an aluminum film is formed over the insulating film 122.

The aluminum film is preferably formed by a sputtering method, anevaporation method, a CVD method, or the like. In addition, thethickness of the aluminum film is preferably greater than or equal to 3nm and less than or equal to 20 nm (further preferably greater than orequal to 3 nm and less than or equal to 10 nm, still further preferablygreater than or equal to 4 nm and less than or equal to 5 nm).

Note that as the aluminum film, an aluminum film to which titanium ormagnesium is added may be used. Alternatively, as the aluminum film, astacked layer including an aluminum film and either a titanium film or amagnesium film may be used.

Next, as illustrated in FIG. 9A, oxygen addition treatment is performedon the aluminum film. For the oxygen addition treatment, the case whereoxygen addition treatment is performed on the insulating film 122 may bereferred to; thus, detailed description is skipped. The oxygen additiontreatment is performed on the aluminum film, whereby an aluminum oxidefilm which is an oxide of the aluminum film is formed. The aluminumoxide film is used as the insulating film 124.

The insulating film 124 functions as a barrier film which preventsimpurities from entering the transistor 201 and prevents oxygen in theinsulating film 122 from being released outside.

After the oxygen is added to the insulating film 122 and the aluminumfilm, heat treatment may be performed. The temperature of the heattreatment may be higher than or equal to 250° C. and lower than or equalto 600° C., for example, 300° C.

In the transistor including an oxide semiconductor, oxygen is suppliedfrom the insulating film to the oxide semiconductor film, whereby theinterface state density between the oxide semiconductor film and theinsulating film can be reduced. As a result, carrier trapping at theinterface between the oxide semiconductor film and the insulating filmdue to the operation of a transistor, or the like can be suppressed, andthus, a transistor with high reliability can be obtained.

The dehydration or dehydrogenation treatment for the insulating film 122and the insulating film 124 and/or the oxygen addition treatment may beperformed plural times.

The insulating film 124 provided over and in contact with the insulatingfilm 122 is a film obtained by oxidizing an aluminum film. When analuminum oxide film is formed by oxidization of an aluminum film,productivity can be increased as compared with the case where analuminum oxide film is formed by a sputtering method. Further, theoxidation of the aluminum film and the oxygen addition treatment on theinsulating film 122 may be performed in one step, which makes a processto be simplified. As a result, the manufacturing cost can be reduced.

In the case where an oxide insulating film (e.g., a silicon oxide filmor a silicon oxynitride film) is used as the insulating film 122, oxygenis one of main components in the oxide insulating film. Thus, it isdifficult to accurately measure the concentration of oxygen in the oxideinsulating film by using a method such as SIMS. That is, it is difficultto judge whether oxygen is intentionally added to the oxide insulatingfilm or not. Further, the same can be applied to the case where oxygencontained excessively in the insulating film 122 is supplied to theoxide semiconductor film 114 in a later step.

As for oxygen, it is known that oxygen contains isotopes such as ¹⁷O and¹⁸O and the proportions of ¹⁷O and ¹⁸O in all of the oxygen atoms innature is about 0.038% and about 0.2%, respectively. That is to say, itis possible to measure the concentrations of these isotopes in theinsulating film in contact with the oxide semiconductor film or theoxide semiconductor film by a method such as SIMS; therefore, the oxygenconcentration in the insulating film in contact with the oxidesemiconductor film or the oxide semiconductor film may be able to beestimated more accurately by measuring the concentrations of theseisotopes. Thus, the concentration of the isotope may be measured todetermine whether oxygen is intentionally added to the insulating filmin contact with the oxide semiconductor film.

Over the insulating film 124, an insulating film functioning as aninterlayer insulating film (such as a protective insulating film or aplanarization insulating film) may be formed. With the interlayerinsulating film (protective insulating film or planarization insulatingfilm), stress on the insulating film 124 which is a thin film can bereduced. Thus, damage on the insulating film 124 can be prevented.

The protective insulating film can be formed using a material and amethod similar to those of the insulating film 122. For example, asilicon oxide film is formed to have a thickness of 400 nm by asputtering method. Heat treatment may be performed after formation ofthe protective insulating film. For example, heat treatment is performedat 300° C. for one hour in a nitrogen atmosphere.

In this embodiment, as illustrated in FIG. 9B, a planarizationinsulating film 126 is formed over the insulating film 124. With theplanarization insulating film 126, surface unevenness due to thetransistor 201 can be reduced. As the planarization insulating film 126,an organic material such as a polyimide resin, an acrylic resin, or abenzocyclobutene resin can be used. Other than such organic materials,it is also possible to use a low-dielectric constant material (a low-kmaterial) or the like. Note that the planarization insulating film 126may be formed by stacking a plurality of insulating films formed usingthese materials.

For example, a 1.5-μm-thick acrylic resin film may be formed as theplanarization insulating film 126. The acrylic resin film can be formedin such a manner that an acrylic resin is applied by a coating methodand then baked (e.g., at 250° C. for one hour in a nitrogen atmosphere).

Heat treatment may be performed after the planarization insulating film126 is formed. For example, heat treatment is performed at 250° C. forone hour in a nitrogen atmosphere.

As described above, heat treatment may be performed after the transistor201 is formed. Heat treatment may be performed plural times.

Next, as illustrated in FIG. 9C, an opening portion is formed in theplanarization insulating film 126, and an electrode 130 electricallyconnected to the drain electrode layer 116 a is formed. For formation ofthe electrode 130, a material and a method similar to those of the gateelectrode layer 106 can be used. Further, in the same step, a wiring 131electrically connected to the wiring 116 c can be formed in the wiringconnection portion.

Through the above steps, a semiconductor device including the transistor201 can be manufactured.

According to one embodiment of the present invention, a highly reliablesemiconductor device in which the transistor 201 including an oxidesemiconductor film has stable electric characteristics can be provided.

Although in this embodiment, a method for manufacturing the transistor201 illustrated in FIGS. 1A and 1B is described in detail, thetransistors 202 to 208 illustrated in FIGS. 2A and 2B, FIGS. 3A and 3B,FIGS. 4A and 4B, FIGS. 5A and 5B, and FIGS. 6A to 6C can be manufacturedreferring to the method for manufacturing the transistor 201.

For example, the transistor 202 in FIGS. 2A and 2B, the transistor 203in FIGS. 3A and 3B, the transistor 204 in FIGS. 4A and 4B, and thetransistor 205 in FIGS. 5A and 5B can be manufactured by changing thetop surface shapes of the gate electrode layer 106, the oxidesemiconductor film 114, the drain electrode layer 116 a, the sourceelectrode layer 116 b, and the like.

The drain electrode layer 116 a and the source electrode layer 116 b ofthe transistor 206 in FIG. 6A can be formed by etching a plurality ofconductive layers with use of one mask.

The drain electrode layer 116 a and the source electrode layer 116 b ofthe transistor 207 in FIG. 6B can be formed by etching a plurality ofconductive layers through the following steps, for example.

First, a conductive layer that is to be the conductive layer 140 a andthe conductive layer 140 b is formed.

Next, a conductive layer that is to be the conductive layer 142 b isformed and then etched by wet etching, so that the conductive layer 142b is formed.

Then, a conductive layer that is to be the conductive layers 144 a and144 b is formed, and the conductive layer that is to be the conductivelayers 140 a and 140 b and the conductive layer that is to be theconductive layers 144 a and 144 b are etched by dry etching, so that theconductive layers 140 a and 140 b and the conductive layers 144 a and144 b are formed.

The dry etching for forming the conductive layer 140 a and theconductive layer 140 b and the dry etching for forming the conductivelayer 144 a and the conductive layer 144 b can be performed with onemask. A mask used for the wet etching for forming the conductive layer142 b may be different from the mask used for the dry etching forforming the conductive layers 140 a and 140 b and the conductive layers144 a and 144 b.

Through the above steps, the conductive layer 140 b and the conductivelayer 144 b can be formed to seal the conductive layer 142 b. With sucha structure, metal used for the conductive layer 142 b can be preventedfrom reaching the oxide semiconductor film 114.

Further, any of the stacked structures of the source electrode layer 116b and the drain electrode layer 116 a illustrated in FIGS. 6A and 6B maybe applied to the gate electrode layer 106.

The structures, methods, and the like described in this embodiment canbe combined as appropriate with any of the other structures, methods,and the like described in the other embodiments.

Embodiment 3

In this embodiment, a display device according to one embodiment of thepresent invention will be described. Any of the transistors described inthe above embodiments can be used as a transistor provided in thedisplay device. Any of the transistors described in the aboveembodiments has stable electric characteristics, which enables anincrease in reliability of the display device.

In the display device according to one embodiment of the presentinvention, any of the transistors described in the above embodiments maybe used for part of a driver circuit and/or part of a pixel. Note thatany of the transistors described in the above embodiments may be usedfor only either the driver circuit or the pixel. Transistors provided inthe driver circuit have a large channel width in many cases because theyare required to have a large amount of current. Therefore, it isparticularly preferable to use any of the transistors described in theabove embodiments for the driver circuit because a large effect ofreducing the area of the driver circuit is obtained.

<Configuration Example of Display Device>

FIG. 10 illustrates a configuration example of a display device. Thedisplay device in FIG. 10 includes a plurality of pixels 10 arranged inm rows and n columns; a scan line driver circuit 1; a signal line drivercircuit 2; a current source 3; m scan lines 4, m scan lines 5, m scanlines 6, and m reverse scan lines 7 which are electrically connected tothe pixels 10 arranged on the respective rows and whose potentials arecontrolled by the scan line driver circuit 1; n signal lines 8 which areelectrically connected to the pixels 10 arranged on the respectivecolumns and whose potentials are controlled by the signal line drivercircuit 2; and a power supply line 9 which is provided with a pluralityof branch lines and is electrically connected to the current source 3.

<Configuration Example of Scan Line Driver Circuit>

FIG. 11 illustrates a configuration example of the scan line drivercircuit 1 included in the display device in FIG. 10. The scan linedriver circuit 1 in FIG. 11 includes wirings that supply first to sixthclock signals (GCK-1 to GCK-6) for the scan line driver circuit(hereinafter “the first clock signal (GCK-1)” to “the sixth clock signalGCK-6”); wirings that supply first and second pulse width controlsignals A (PWC-A1 and PWC-A2); wirings that supply first to sixth pulsewidth control signals B (PWC-B1 to PWC-B6); wirings that supply first tothird pulse width control signals C (PWC-C1 to PWC-C3); first to m-thpulse output circuits 20_1 to 20 _(—) m that are electrically connectedto the pixels 10 arranged on the first to m-th rows through scan lines4_1 to 4 _(—) m, scan lines 5_1 to 5 _(—) m, and scan lines 6_1 to 6_(—) m; and first to m-th inverted pulse output circuits 60_1 to 60 _(—)m that are electrically connected to the pixels 10 arranged on the firstto m-th rows through reverse scan lines 7_1 to 7 _(—) m.

The first to m-th pulse output circuits 20_1 to 20 _(—) m are configuredto sequentially shift a shift pulse in response to a scan line drivercircuit start pulse GSP which is input to the first pulse output circuit20_1. Specifically, after the scan line driver circuit start pulse (GSP)is input to the first pulse output circuit 20_1, the first pulse outputcircuit 20_1 outputs a shift pulse to the second pulse output circuit202. Next, after the shift pulse output from the first pulse outputcircuit 20_1 is input to the second pulse output circuit 202, the secondpulse output circuit 20_2 outputs a shift pulse to the third pulseoutput circuit 20_3. After that, operations similar to the aboveoperations are repeated until a shift pulse is input to the m-th pulseoutput circuit 20 _(—) m.

The first to m-th pulse output circuits 20_1 to 20 _(—) m are configuredto output selection signals to respective scan lines 4_1 to 4 _(—) m,respective scan lines 5_1 to 5 _(—) m, and respective scan lines 6_1 to6 _(—) m, when the scan line driver circuit start pulse (GSP) or a shiftpulse is input. Note that the selection signals refer to signals forturning on switches whose switching is controlled by potentials ofrespective scan lines 4_1 to 4 _(—) m, respective scan lines 5_1 to 5_(—) m, and respective scan lines 6_1 to 6 _(—) m.

FIG. 12 shows a specific example of waveforms of the above signals.

The first clock signal (GCK-1) in FIG. 12 periodically alternatesbetween a high-level potential (high power supply potential (Vdd)) and alow-level potential (low power supply potential (Vss)) and has a dutyratio of 1/2. The second clock signal (GCK-2) has a phase shifted by 1/6period from the first clock signal (GCK-1); the third clock signal(GCK-3) has a phase shifted by 1/3 period from the first clock signal(GCK-1); the fourth clock signal (GCK-4) has a phase shifted by 1/2period from the first clock signal (GCK-1); the fifth clock signal(GCK-5) has a phase shifted by 2/3 period from the first clock signal(GCK-1); and the sixth clock signal (GCK-6) has a phase shifted by 5/6period from the first clock signal (GCK-1).

The first pulse width control signal A (PWC-A1) in FIG. 12 periodicallyalternates between the high-level potential (high power supply potential(Vdd)) and the low-level potential (low power supply potential (Vss))and has a duty ratio of 2/5. The second pulse width control signal A(PWC-A2) has a phase shifted by 1/2 period from the first pulse widthcontrol signal A (PWC-A1).

The first pulse width control signal B (PWC-B1) in FIG. 12 periodicallyalternates between the high-level potential (high power supply potential(Vdd)) and the low-level potential (low power supply potential (Vss))and has a duty ratio of 2/15. The second pulse width control signal B(PWC-B2) is a signal whose phase is shifted by 1/6 period from the firstpulse width control signal B (PWC-B1); the third pulse width controlsignal B (PWC-B3) is a signal whose phase is shifted by 1/3 period fromthe first pulse width control signal B (PWC-B1); the fourth pulse widthcontrol signal B (PWC-B4) is a signal whose phase is shifted by 1/2period from the first pulse width control signal B (PWC-B1); the fifthpulse width control signal B (PWC-B5) is a signal whose phase is shiftedby 2/3 period from the first pulse width control signal B (PWC-B1); andthe sixth pulse width control signal B (PWC-B6) is a signal whose phaseis shifted by 5/6 period from the first pulse width control signal B(PWC-B1).

The first pulse width control signal C (PWC-C1) in FIG. 12 periodicallyalternates between the high-level potential (high power supply potential(Vdd)) and the low-level potential (low power supply potential (Vss))and has a duty ratio of 4/15. The first pulse width control signal C(PWC-C1) can also be expressed as a signal which is at the high-levelpotential in a period when the second pulse width control signal B(PWC-B2) is at the high-level potential and in a period when the fifthpulse width control signal B (PWC-B5) is at the high-level potential.The second pulse width control signal C (PWC-C2) is a signal whose phaseis shifted by 1/3 period from the first pulse width control signal C(PWC-C1); and the third pulse width control signal C (PWC-C3) is asignal whose phase is shifted by 2/3 period from the first pulse widthcontrol signal C (PWC-C1).

In the display device in FIG. 11, the same configuration can be appliedto the first to m-th pulse output circuits 20_1 to 20 _(—) m. Note thatelectrical connections of a plurality of terminals included in the pulseoutput circuit differ depending on the pulse output circuits. Specificconnections will be described with reference to FIG. 11 and FIG. 13A.

Each of the first to m-th pulse output circuits 20_1 to 20 _(—) m hasterminals 21 to 30. The terminals 21 to 25 and 29 are input terminals,and the terminals 26 to 28 and 30 are output terminals.

First, the terminal 21 will be described. The terminal 21 of the firstpulse output circuit 20_1 is electrically connected to a wiring thatsupplies the scan line driver circuit start pulse (GSP). The terminals21 of the second to m-th pulse output circuits 20_2 to 20 _(—) m areelectrically connected to the respective terminals 30 of the respectiveprevious-stage pulse output circuits.

The terminal 22 will be described. The terminal 22 of the (6 a-5)-thpulse output circuit 20_6 a-5 (a is a natural number less than or equalto m/6) is electrically connected to the wiring that supplies the firstclock signal (GCK-1). The terminal 22 of the (6 a-4)-th pulse outputcircuit 20_6 a-4 is electrically connected to the wiring that suppliesthe second clock signal (GCK-2). The terminal 22 of the (6 a-3)-th pulseoutput circuit 20_6 a-3 is electrically connected to the wiring thatsupplies the third clock signal (GCK-3). The terminal 22 of the (6a-2)-th pulse output circuit 20_6 a-2 is electrically connected to thewiring that supplies the fourth clock signal (GCK-4). The terminal 22 ofthe (6 a-1)-th pulse output circuit 20_6 a-1 is electrically connectedto the wiring that supplies the fifth clock signal (GCK-5). The terminal22 of the 6 a-th pulse output circuit 20_6 a is electrically connectedto the wiring that supplies the sixth clock signal (GCK-6).

The terminal 23 will be described. The terminal 23 of the (6 a-5)-thpulse output circuit 20_6 a-5, the terminal 23 of the (6 a-3)-th pulseoutput circuit 20_6 a-3, and the terminal 23 of the (6 a-1)-th pulseoutput circuit 20_6 a-1 are electrically connected to the wiring thatsupplies the first pulse width control signal A (PWC-A1). The terminal23 of the (6 a-4)-th pulse output circuit 20_6 a-4, the terminal 23 ofthe (6 a-2)-th pulse output circuit 20_6 a-2, and the terminal 23 of the6 a-th pulse output circuit 20_6 a are electrically connected to thewiring that supplies the second pulse width control signal A (PWC-A2).

The terminal 24 will be described. The terminal 24 of the (6 a-5)-thpulse output circuit 20_6 a-5 is electrically connected to the wiringthat supplies the first pulse width control signal B (PWC-B1). Theterminal 24 of the (6 a-4)-th pulse output circuit 20_6 a-4 iselectrically connected to the wiring that supplies the second pulsewidth control signal B (PWC-B2). The terminal 24 of the (6 a-3)-th pulseoutput circuit 20_6 a-3 is electrically connected to the wiring thatsupplies the third pulse width control signal B (PWC-B3). The terminal24 of the (6 a-2)-th pulse output circuit 20_6 a-2 is electricallyconnected to the wiring that supplies the fourth pulse width controlsignal B (PWC-B4). The terminal 24 of the (6 a-1)-th pulse outputcircuit 20_6 a-1 is electrically connected to the wiring that suppliesthe fifth pulse width control signal B (PWC-B5). The terminal 24 of the6 a-th pulse output circuit 20_6 a is electrically connected to thewiring that supplies the sixth pulse width control signal B (PWC-B6).

The terminal 25 will be described. The terminal 25 of the (6 a-5)-thpulse output circuit 20_6 a-5 and the terminal 25 of the (6 a-2)-thpulse output circuit 20_6 a-2 are electrically connected to the wiringthat supplies the first pulse width control signal C (PWC-C1). Theterminal 25 of the (6 a-4)-th pulse output circuit 20_6 a-4 and theterminal 25 of the (6 a-1)-th pulse output circuit 20_6 a-1 areelectrically connected to the wiring that supplies the second pulsewidth control signal C (PWC-C2). The terminal 25 of the (6 a-3)-th pulseoutput circuit 20_6 a-3 and the terminal 25 of the 6 a-th pulse outputcircuit 20_6 a are electrically connected to the wiring that suppliesthe third pulse width control signal C (PWC-C3).

The terminal 26 will be described. The terminal 26 of the x-th pulseoutput circuit 20 _(—) x (x is a natural number less than or equal to m)is electrically connected to the scan line 4 _(—) x in the x-th row.

The terminal 27 will be described. The terminal 27 of the x-th pulseoutput circuit 20 _(—) x is electrically connected to the scan line 5_(—) x in the x-th row.

The terminal 28 will be described. The terminal 28 of the x-th pulseoutput circuit 20 _(—) x is electrically connected to the scan line 6_(—) x in the x-th row.

The terminal 29 will be described. The terminal 29 of the y-th pulseoutput circuit 20 _(—) y (y is a natural number less than or equal to(m−3)) is electrically connected to the terminal 30 of the (y+3)-thpulse output circuit 20 _(—) y+3. The terminal 29 of the (m−2)-th pulseoutput circuit 20 _(—) m−2 is electrically connected to a wiring thatsupplies a stop signal (STP1) for the (m−2)-th pulse output circuit. Theterminal 29 of the (m−1)-th pulse output circuit 20 _(—) m−1 iselectrically connected to a wiring that supplies a stop signal (STP2)for the (m−1)-th pulse output circuit. The terminal 29 of the m-th pulseoutput circuit 20 _(—) m is electrically connected to a wiring thatsupplies a stop signal (STP3) for the m-th pulse output circuit. In thecase where a (m+1)-th pulse output circuit is provided, the stop signal(STP1) for the (m−2)-th pulse output circuit corresponds to a signaloutput from the terminal 30 of the (m+1)-th pulse output circuit. In thecase where a (m+2)-th pulse output circuit is provided, the stop signal(STP2) for the (m−1)-th pulse output circuit corresponds to a signaloutput from the terminal 30 of the (m+2)-th pulse output circuit. In thecase where a (m+3)-th pulse output circuit is provided, the stop signal(STP3) for the m-th pulse output circuit corresponds to a signal outputfrom the terminal 30 of the (m+3)-th pulse output circuit. Specifically,these signals can be obtained by actually providing the (m+1)-th to(m+3)-th pulse output circuits as dummy circuits or by inputting thesignals directly from an external portion.

The connection relation of the terminal 30 of each pulse output circuitis described above. Thus, for the description thereof, refer to theabove description.

In the display device in FIG. 11, the same configuration can be appliedto the first to m-th inverted pulse output circuits 60_1 to 60 _(—) m.However, the electrical connections of a plurality of terminals includedin the inverted pulse output circuit differ depending on the invertedpulse output circuits. Specific connections will be described withreference to FIG. 11 and FIG. 13B.

Each of the first to m-th inverted pulse output circuits 60_1 to 60 _(—)m has terminals 61 to 65. The terminals 61 to 64 are input terminals,and the terminal 65 is an output terminal.

First, the terminal 61 will be described. The terminal 61 of the firstinverted pulse output circuit 60_1 is electrically connected to a wiringthat supplies the scan line driver circuit start pulse (GSP). Theterminals 61 of the second to m-th inverted pulse output circuits 60_2to 60 _(—) m are electrically connected to the respective terminals 30of the respective previous-stage pulse output circuits.

The terminal 62 will be described. The terminal 62 of the x-th invertedpulse output circuit 60 _(—) x is electrically connected to the terminal30 of the x-th pulse output circuit 20 _(—) x.

The terminal 63 will be described. The terminal 63 of the (6 a-5)-thinverted pulse output circuit 60_6 a-5 is electrically connected to thewiring that supplies the fourth pulse width control signal B (PWC-B4).The terminal 63 of the (6 a-4)-th inverted pulse output circuit 60_6 a-4is electrically connected to the wiring that supplies the fifth pulsewidth control signal B (PWC-B5). The terminal 63 of the (6 a-3)-thinverted pulse output circuit 60_6 a-3 is electrically connected to thewiring that supplies the sixth pulse width control signal B (PWC-B6).The terminal 63 of the (6 a-2)-th inverted pulse output circuit 60_6 a-2is electrically connected to the wiring that supplies the first pulsewidth control signal B (PWC-B1). The terminal 63 of the (6 a-1)-thinverted pulse output circuit 60_6 a-1 is electrically connected to thewiring that supplies the second pulse width control signal B (PWC-B2).The terminal 63 of the 6 a-th inverted pulse output circuit 60_6 a iselectrically connected to the wiring that supplies the third pulse widthcontrol signal B (PWC-B3).

The terminal 64 will be described. The terminal 64 of the y-th invertedpulse output circuit 60 _(—) y is electrically connected to the terminal30 of the (y+3)-th pulse output circuit 20 y+3. The terminal 64 of the(m−2)-th inverted pulse output circuit 60 _(—) m−2 is electricallyconnected to the wiring that supplies a stop signal (STP1) for the(m−2)-th pulse output circuit. The terminal 64 of the (m−1)-th invertedpulse output circuit 60 _(—) m−1 is electrically connected to the wiringthat supplies a stop signal (STP2) for the (m−1)-th pulse outputcircuit. The terminal 64 of the m-th inverted pulse output circuit 60_(—) m is electrically connected to the wiring that supplies a stopsignal (STP3) for the m-th pulse output circuit. The terminal 65 will bedescribed. The terminal 65 of the x-th inverted pulse output circuit 60x is electrically connected to the inverted scan line 7 _(—) x in thex-th row.

<Configuration Example of Pulse Output Circuit>

FIG. 14A illustrates a configuration example of the pulse output circuitillustrated in FIG. 11 and FIG. 13A. The pulse output circuitillustrated in FIG. 14A includes transistors 31 to 42.

One of a source and a drain of the transistor 31 is electricallyconnected to a wiring that supplies the high power supply potential(Vdd) (hereinafter also referred to as a high power supply potentialline); and a gate of the transistor 31 is electrically connected to theterminal 21.

One of a source and a drain of the transistor 32 is electricallyconnected to a wiring that supplies the low power supply potential (Vss)(hereinafter also referred to as a low power supply potential line); andthe other of the source and the drain of the transistor 32 iselectrically connected to the other of the source and the drain of thetransistor 31.

One of a source and a drain of the transistor 33 is electricallyconnected to the terminal 22; the other of the source and the drain ofthe transistor 33 is electrically connected to the terminal 30; and agate of the transistor 33 is electrically connected to the other of thesource and the drain of the transistor 31 and the other of the sourceand the drain of the transistor 32.

One of a source and a drain of the transistor 34 is electricallyconnected to the low power supply potential line; the other of thesource and the drain of the transistor 34 is electrically connected tothe terminal 30; and a gate of the transistor 34 is electricallyconnected to a gate of the transistor 32.

One of a source and a drain of the transistor 35 is electricallyconnected to the low power supply potential line; the other of thesource and the drain of the transistor 35 is electrically connected tothe gate of the transistor 32 and the gate of the transistor 34; and agate of the transistor 35 is electrically connected to the terminal 21.

One of a source and a drain of the transistor 36 is electricallyconnected to the high power supply potential line; the other of thesource and the drain of the transistor 36 is electrically connected tothe gate of the transistor 32, the gate of the transistor 34, and theother of the source and the drain of the transistor 35; and a gate ofthe transistor 36 is electrically connected to the terminal 29.

One of a source and a drain of the transistor 37 is electricallyconnected to the terminal 23; the other of the source and the drain ofthe transistor 37 is electrically connected to the terminal 26; and agate of the transistor 37 is electrically connected to the other of thesource and the drain of the transistor 31, the other of the source andthe drain of the transistor 32, and the gate of the transistor 33.

One of a source and a drain of the transistor 38 is electricallyconnected to the low power supply potential line; the other of thesource and the drain of the transistor 38 is electrically connected tothe terminal 26; and a gate of the transistor 38 is electricallyconnected to the gate of the transistor 32, the gate of the transistor34, the other of the source and the drain of the transistor 35, and theother of the source and the drain of the transistor 36.

One of a source and a drain of the transistor 39 is electricallyconnected to the terminal 24; the other of the source and the drain ofthe transistor 39 is electrically connected to the terminal 27; and agate of the transistor 39 is electrically connected to the other of thesource and the drain of the transistor 31, the other of the source andthe drain of the transistor 32, the gate of the transistor 33, and thegate of the transistor 37.

One of a source and a drain of the transistor 40 is electricallyconnected to the low power supply potential line; the other of thesource and the drain of the transistor 40 is electrically connected tothe terminal 27; and a gate of the transistor 40 is electricallyconnected to the gate of the transistor 32, the gate of the transistor34, the other of the source and the drain of the transistor 35, theother of the source and the drain of the transistor 36, and the gate ofthe transistor 38.

One of a source and a drain of the transistor 41 is electricallyconnected to the terminal 25; the other of the source and the drain ofthe transistor 41 is electrically connected to the terminal 28; and agate of the transistor 41 is electrically connected to the other of thesource and the drain of the transistor 31, the other of the source andthe drain of the transistor 32, the gate of the transistor 33, the gateof the transistor 37, and the gate of the transistor 39.

One of a source and a drain of the transistor 42 is electricallyconnected to the low power supply potential line; the other of thesource and the drain of the transistor 42 is electrically connected tothe terminal 28; and a gate of the transistor 42 is electricallyconnected to the gate of the transistor 32, the gate of the transistor34, the other of the source and the drain of the transistor 35, theother of the source and the drain of the transistor 36, the gate of thetransistor 38, and the gate of the transistor 40.

Note that in the following description, a node where the other of thesource and the drain of the transistor 31, the other of the source andthe drain of the transistor 32, the gate of the transistor 33, the gateof the transistor 37, the gate of the transistor 39, and the gate of thetransistor 41 are electrically connected is referred to as a node A. Anode where the gate of the transistor 32, the gate of the transistor 34,the other of the source and the drain of the transistor 35, the other ofthe source and the drain of the transistor 36, the gate of thetransistor 38, the gate of the transistor 40, and the gate of thetransistor 42 are electrically connected is referred to as a node B.

<Operation Example of Pulse Output Circuit>

An operation example of the above pulse output circuit will be describedwith reference to FIG. 14B. FIG. 14B shows signals input to therespective terminals of the second pulse output circuit 20_2 at the timewhen a shift pulse is input from the first pulse output circuit 20_1,potentials of the signals output from the respective terminals, andpotentials of the nodes A and B. Note that in FIG. 14B, Gout4 representsa signal output from any of the pulse output circuits to thecorresponding scan line 4, Gout5 represents a signal output from any ofthe pulse output circuits to the corresponding scan line 5, Gout6represents a signal output from any of the pulse output circuits to thecorresponding scan line 6, and SRout represents a signal output from anyof the pulse output circuits to the next-stage pulse output circuit.

First, the case where a shift pulse is input from the first pulse outputcircuit 20_1 to the second pulse output circuit 20_2 will be describedwith reference to FIG. 14B.

In a period t1, the high-level potential (high power supply potential(Vdd)) is input to the terminal 21. Accordingly, the transistors 31 and35 are turned on, so that the potential of the node A is raised to ahigh-level potential (a potential lower than the high power supplypotential (Vdd) by the threshold voltage of the transistor 31), and thepotential of the node B is lowered to the low power supply potential(Vss). Accordingly, the transistors 33, 37, 39, and 41 are turned on,and the transistors 32, 34, 38, 40 and 42 are turned off. Thus, in theperiod t1, a signal output from the terminal 26 is input to the terminal23, a signal output from the terminal 27 is input to the terminal 24, asignal output from the terminal 28 is input to the terminal 25, and asignal output from the terminal 30 is input to the terminal 22. Here, inthe period t1, the signals input to the terminals 22 to 25 are at thelow-level potential (low power supply potential (Vss)). Thus, in theperiod t1, the second pulse output circuit 20_2 outputs the low-levelpotential (low power supply potential (Vss)) to the terminal 21 of thethird pulse output circuit 20_3 and the scan lines 42, 5_2, and 6_2 inthe second row in a pixel portion.

In a period t2, the high-level potential (high power supply potential(Vdd)) is input to the terminal 23. Note that the potential of the nodeA (the potential of the source of the transistor 31) is raised to ahigh-level potential (the potential lower than the high power supplypotential (Vdd) by the threshold voltage of the transistor 31) in theperiod t1. Thus, the transistor 31 is off. At this time, the input ofthe high-level potential (high power supply potential (Vdd)) to theterminal 23 further raises the potential of the node A (a potential ofthe gate of the transistor 37) owing to the capacitive coupling betweenthe gate and the source of the transistor 37 (bootstrapping). Owing tothe bootstrapping, the potential of the signal output from the terminal26 is not lower than the high-level potential (high power supplypotential (Vdd)) input to the terminal 23 (a signal which is the same orsubstantially the same as the signal input to the terminal 23 is outputfrom the terminal 26). Accordingly, in the period t2, the second pulseoutput circuit 202 outputs the high-level potential (high power supplypotential (Vdd)=a selection signal) to the scan line 4_2 in the secondrow in the pixel portion. In addition, the second pulse output circuit202 outputs the low-level potential (low power supply potential (Vss))to the terminal 21 of the third pulse output circuit 20_3 and the scanlines 5_2 and 6_2 in the second row in the pixel portion.

In a period t3, the high-level potential (high power supply potential(Vdd)) is input to at least the terminal 22. Thus, the potential of thenode A remains higher than that in the period t1 as in the period t2.Accordingly, a signal which is the same or substantially the same as thesignal input to the terminal 23 is output from the terminal 26; a signalwhich is the same or substantially the same as the signal input to theterminal 24 is output from the terminal 27; a signal which is the sameor substantially the same as the signal input to the terminal 25 isoutput from the terminal 28; and a signal which is the same orsubstantially the same as the signal input to the terminal 22 is outputfrom the terminal 30. That is to say, in the period t3, the second pulseoutput circuit 20_2 outputs a signal which is the same or substantiallythe same as the signal input to the terminal 22 to the terminal 21 ofthe third pulse output circuit 20_3, a signal which is the same orsubstantially the same as the signal input to the terminal 23 to thescan line 42, a signal which is the same or substantially the same asthe signal input to the terminal 24 to the scan line 5_2, and a signalwhich is the same or substantially the same as the signal input to theterminal 25 to the scan line 6_2.

In a period t4, the high-level potential (high power supply potential(Vdd)) is input to the terminal 29. Accordingly, the transistor 36 isturned on, so that the potential of the node B is raised to a high-levelpotential (a potential lower than the high power supply potential (Vdd)by the threshold voltage of the transistor 36). That is, the transistors32, 34, 38, 40, 42 are turned on. Accordingly, the potential of the nodeA is lowered to the low-level potential (low power supply potential(Vss)), so that the transistors 33, 37, 39, and 41 are turned off. Thus,in the period t4, all the signals output from the terminals 26, 27, 28,and 30 are at the low power supply potential (Vss). In other words, inthe period t4, the second pulse output circuit 20_2 outputs the lowpower supply potential (Vss) to the terminal 21 of the third pulseoutput circuit 20_3, and the scan lines 4_2, 5_2, and 6_2 in the secondrow in the pixel portion.

<Configuration Example of Inverted Pulse Output Circuit>

FIG. 15A illustrates a configuration example of the inverted pulseoutput circuit illustrated in FIG. 11 and FIG. 13B. The inverted pulseoutput circuit in FIG. 15A includes transistors 71 to 77.

One of a source and a drain of the transistor 71 is electricallyconnected to the high power supply potential line; and a gate of thetransistor 71 is electrically connected to the terminal 63.

One of a source and a drain of the transistor 72 is electricallyconnected to the high power supply potential line; the other of thesource and the drain of the transistor 72 is electrically connected tothe other of the source and the drain of the transistor 71; and a gateof the transistor 72 is electrically connected to the terminal 64.

One of a source and a drain of the transistor 73 is electricallyconnected to the low power supply potential line; the other of thesource and the drain of the transistor 73 is electrically connected tothe other of the source and the drain of the transistor 71 and the otherof the source and the drain of the transistor 72; and a gate of thetransistor 73 is electrically connected to the terminal 61.

One of a source and a drain of the transistor 74 is electricallyconnected to the low power supply potential line; the other of thesource and the drain of the transistor 74 is electrically connected tothe other of the source and the drain of the transistor 71, the other ofthe source and the drain of the transistor 72, and the other of thesource and the drain of the transistor 73; and a gate of the transistor74 is electrically connected to the terminal 62.

One of a source and a drain of the transistor 75 is electricallyconnected to the high power supply potential line; the other of thesource and the drain of the transistor 75 is electrically connected tothe terminal 65; and a gate of the transistor 75 is electricallyconnected to the other of the source and the drain of the transistor 71,the other of the source and the drain of the transistor 72, the other ofthe source and the drain of the transistor 73, and the other of thesource and the drain of the transistor 74.

One of a source and a drain of the transistor 76 is electricallyconnected to the low power supply potential line; the other of thesource and the drain of the transistor 76 is electrically connected tothe terminal 65; and a gate of the transistor 76 is electricallyconnected to the terminal 61.

One of a source and a drain of the transistor 77 is electricallyconnected to the low power supply potential line; the other of thesource and the drain of the transistor 77 is electrically connected tothe terminal 65; and a gate of the transistor 77 is electricallyconnected to the terminal 62.

Note that in the following description, a node where the other of thesource and the drain of the transistor 71, the other of the source andthe drain of the transistor 72, the other of the source and the drain ofthe transistor 73, the other of the source and the drain of thetransistor 74, and the gate of the transistor 75 are electricallyconnected is referred to as a node C.

<Operation Example of Inverted Pulse Output Circuit>

An operation example of the inverted pulse output circuit will bedescribed with reference to FIG. 15B. FIG. 15B illustrates signals inputto the respective terminals of the second inverted pulse output circuit202, potentials of signals output therefrom, and potentials of the nodeC in periods t1 to t4 in FIG. 15B. The periods t1 to t4 in FIG. 15Bcorrespond to the periods t1 to t4 in FIG. 14B. Note that in FIG. 15B,the signals input to the terminals are provided in parentheses. Further,in FIG. 15B, GBout represents a signal output to any of the invertedscan line of the inverted pulse output circuits.

In the periods t1 to t3, the high-level potential (high power supplypotential (Vdd)) is input to at least one of the terminal 61 and theterminal 62. Thus, the transistors 73 and 76 or the transistors 74 and77 are turned on, so that the potential of the node C is lowered to thelow-level potential (low power supply potential (Vss)). The transistor75 is turned off accordingly. Thus, in the periods t1 to t3, the signaloutput from the terminal 65 is at the low-level potential (low powersupply potential (Vss)), so that in the periods t1 to t3, the secondinverted pulse output circuit 602 outputs the low-level potential (lowpower supply potential (Vss)) to the inverted scan line 7_2 in thesecond row in the pixel portion.

In the period t4, the low-level potential (low power supply potential(Vss)) is input to the terminal 61 and the terminal 62, and thehigh-level potential (high power supply potential (Vdd)) is input to theterminal 64. Accordingly, the transistors 73, 74, 76, and 77 are turnedoff, and the transistor 72 is turned on, so that the potential of thenode C is raised to a high-level potential (a potential lower than thehigh power supply potential (Vdd) by the threshold voltage of thetransistor 72), and the transistor 75 is turned on. Note that thetransistor 72 is turned off when the potential of the node C is raisedto the potential lower than the high power supply potential (Vdd) by thethreshold voltage of the transistor 72. When the transistor 72 is turnedoff, the transistor 75 remains on. In this case, the potential of thenode C is further raised even after the transistor 72 is turned off,owing to the capacitive coupling between the gate (node C) and thesource of the transistor 75. Thus, the signal output from the terminal65 is not lower than the high power supply potential (Vdd).

Accordingly, in the period t4, the signal output from the terminal 65 isat the high power supply potential (Vdd). That is, in the period t4, thesecond inverted pulse output circuit 60_2 outputs the high power supplypotential (Vdd) to the inverted scan line 7_2 in the second row in thepixel portion.

<Configuration Example of Pixel>

FIG. 16A is a circuit diagram illustrating a configuration example ofthe pixel 10 in FIG. 10. The case where an element in which an organicmaterial that emits light owing to current excitation is providedbetween a pair of electrodes (hereinafter also referred to as an organicelectroluminescent (EL) element) is used as a display element isdescribed.

The pixel 10 in FIG. 16A includes transistors 11 to 16, capacitors 17and 18, and an organic EL element 19.

One of a source and a drain of the transistor 11 is electricallyconnected to the signal line 8; and a gate of the transistor 11 iselectrically connected to the scan line 6.

One of a source and a drain of the transistor 12 is electricallyconnected to a wiring that supplies a potential V 1; and a gate of thetransistor 12 is electrically connected to the scan line 5. Here, assumethat the potential V1 is lower than the high power supply potential(Vdd) and higher than the low power supply potential (Vss).

One of a source and a drain of the transistor 13 is electricallyconnected to the power supply line 9; and a gate of the transistor 13 iselectrically connected to the other of the source and the drain of thetransistor 12.

One of a source and a drain of the transistor 14 is electricallyconnected to the other of the source and the drain of the transistor 11;the other of the source and the drain of the transistor 14 iselectrically connected to the other of the source and the drain of thetransistor 13; and a gate of the transistor 14 is electrically connectedto the scan line 5.

One of a source and a drain of the transistor 15 is electricallyconnected to a wiring that supplies a potential V0; the other of thesource and the drain of the transistor 15 is electrically connected tothe other of the source and the drain of the transistor 13 and the otherof the source and the drain of the transistor 14; and a gate of thetransistor 15 is electrically connected to the scan line 4. Here, assumethat the potential V0 is lower than the potential V1 and higher than thelow power supply potential (Vss).

One of a source and a drain of the transistor 16 is electricallyconnected to the other of the source and the drain of the transistor 13,the other of the source and the drain of the transistor 14, and theother of the source and the drain of the transistor 15; and a gate ofthe transistor 16 is electrically connected to the inverted scan line 7.

One electrode of the capacitor 17 is electrically connected to the otherof the source and the drain of the transistor 12 and the gate of thetransistor 13; and the other electrode of the capacitor 17 iselectrically connected to the other of the source and the drain of thetransistor 11 and the one of the source and the drain of the transistor14.

One electrode of the capacitor 18 is electrically connected to the otherof the source and the drain of the transistor 11, the one of the sourceand the drain of the transistor 14, and the other electrode of thecapacitor 17; and the other electrode of the capacitor 18 iselectrically connected to the other of the source and the drain of thetransistor 13, the other of the source and the drain of the transistor14, the other of the source and the drain of the transistor 15, and theone of the source and the drain of the transistor 16.

An anode of the organic EL element 19 is electrically connected to theother of the source and the drain of the transistor 16; a cathode of theorganic EL element 19 is electrically connected to a wiring thatsupplies a common potential. Note that the common potential given to thewiring electrically connected to the one of the source and the drain ofthe transistor 12 may be different from the common potential given tothe cathode of the organic EL element 19.

Here, assume that the potential supplied by the power supply line 9 islower than the high power supply potential (Vdd) and higher than thepotential V1, and the common potential is lower than the low powersupply potential (Vss).

Hereinafter, a node where the other of the source and the drain of thetransistor 12, the gate of the transistor 13, and the one electrode ofthe capacitor 17 are electrically connected is referred to as a node D.A node where the other of the source and the drain of the transistor 11,the one of the source and the drain of the transistor 14, the otherelectrode of the capacitor 17, and the one electrode of the capacitor 18are electrically connected is referred to as a node E. A node where theother of the source and the drain of the transistor 13, the other of thesource and the drain of the transistor 14, the other of the source andthe drain of the transistor 15, the one of the source and the drain ofthe transistor 16, and the other electrode of the capacitor 18 areelectrically connected is referred to as a node F.

FIG. 17A illustrates part of a cross section of the pixel 10. Note thatthe transistors other than the transistor 16 are not illustrated forsimplicity.

FIG. 17A shows an example where the transistor 16 and the capacitor 18are provided in the same plane. With such a structure, one of capacitorelectrodes, a dielectric layer, and the other of the capacitorelectrodes, which are included in the capacitor 18, can be formed usingthe same layers and the same materials as the gate electrode, the gateinsulating film, and the source electrode (drain electrode), which areincluded in the transistor 16, respectively.

When the transistor 16 and the capacitor 18 are provided in the sameplane, the number of manufacturing steps of a display device can bereduced; thus, productivity can be increased.

Any of the transistors described in the above embodiments can be appliedto the transistor 16. FIG. 17A shows an example where a transistor whosestructure and manufacturing method are similar to those of FIGS. 1A and1B is used.

A planarization insulating film 80 having an opening portion reachingthe drain electrode of the transistor 16 is provided over the transistor16 and the capacitor 18.

An anode 81 is provided over the planarization insulating film 80. Theanode 81 is in contact with the drain electrode of the transistor 16through the opening portion in the planarization insulating film 80.

A partition 84 having an opening portion reaching the anode 81 isprovided over the anode 81.

A light-emitting layer 82 in contact with the anode 81 in the openingportion in the partition 84 is provided over the partition 84.

A cathode 83 is provided over the light-emitting layer 82.

A region where the anode 81, the light-emitting layer 82, and thecathode 83 overlap with one another serves as the organic EL element 19.

Note that the planarization insulating film 80 can be formed using anyof the materials for the planarization insulating film 126.

The light-emitting layer 82 is not limited to a single layer, and may bea stack of plural kinds of light-emitting materials. For example, astructure illustrated in FIG. 17B may be employed. FIG. 17B illustratesa structure in which an intermediate layer 85 a, a light-emitting layer86 a, an intermediate layer 85 b, a light-emitting layer 86 b, anintermediate layer 85 c, a light-emitting layer 86 c, and anintermediate layer 85 d are stacked in this order. In this case, whenmaterials emitting light of appropriate colors are used for thelight-emitting layer 86 a, the light-emitting layer 86 b, and thelight-emitting layer 86 c, the organic EL element 19 with a high colorrending property or higher emission efficiency can be formed.

White light may be obtained by stacking plural kinds of light-emittingmaterials. Although not illustrated in FIG. 17A, white light may beextracted through coloring layers.

Although the structure in which three light-emitting layers and fourintermediate layers are provided is shown here, the number oflight-emitting layers and the number of intermediate layers can bechanged as appropriate without limitation thereto. For example, thelight-emitting layer 82 can be formed with only the intermediate layer85 a, the light-emitting layer 86 a, the intermediate layer 85 b, thelight-emitting layer 86 b, and the intermediate layer 85 c.Alternatively, the light-emitting layer 82 may be formed with theintermediate layer 85 a, the light-emitting layer 86 a, the intermediatelayer 85 b, the light-emitting layer 86 b, the light-emitting layer 86c, and the intermediate layer 85 d; the intermediate layer 85 c may beomitted.

In addition, the intermediate layer can be formed using a stackedstructure including any of a hole-injection layer, a hole-transportlayer, an electron-transport layer, an electron-injection layer, and thelike. Note that not all of these layers need to be provided as theintermediate layer. Any of these layers may be selected as appropriateto form the intermediate layer. Note that layers having similarfunctions may be provided. Further, an electron-relay layer or the likemay be added as appropriate as the intermediate layer, in addition to acarrier generation layer.

The anode 81 may be formed using a conductive film having a transmittingproperty with respect to visible light. The phrase “having atransmitting property with respect to visible light” means that theaverage transmittance of light in a visible light region (for example, awavelength range from 400 nm to 800 nm) is higher than or equal to 70%,particularly higher than or equal to 80%.

As the anode 81, for example, an oxide film such as an In—Zn—W-basedoxide film, an In—Sn-based oxide film, an In—Zn-based oxide film, anIn-based oxide film, a Zn-based oxide film, or a Sn-based oxide film maybe used. The above oxide film may contain a minute amount of Al, Ga, Sb,F, or the like. Further, a metal thin film having a thickness smallenough to transmit light (preferably, approximately 5 nm to 30 nm) canalso be used. For example, a Ag film, a Mg film, or a Ag—Mg alloy filmwith a thickness of 5 nm may be used.

The anode 81 is preferably a film which efficiently reflects visiblelight. For example, a film containing lithium, aluminum, titanium,magnesium, lanthanum, silver, silicon, or nickel may be used as theanode 81.

The cathode 83 can be formed using any of the films for the anode 81.Note that when the anode 81 has a transmitting property with respect tovisible light, it is preferable that the cathode 83 efficiently reflectvisible light. When the anode 81 efficiently reflects visible light, itis preferable that the cathode 83 have a transmitting property withrespect to visible light.

Positions of the anode 81 and the cathode 83 are not limited to thestructure illustrated in FIG. 17A, and the anode 81 and the cathode 83may be replaced with each other. It is preferable to use a materialhaving a high work function for the electrode which functions as ananode, and a material having a low work function for the electrode whichfunctions as a cathode. Note that in the case where a carrier generationlayer is provided in contact with the anode, a variety of conductivematerials can be used for the anode regardless of their work functions.

The partition 84 may be formed using any of the materials for theplanarization insulating film 126.

The transistor 16 connected to the organic EL element 19 has lessvariation in electric characteristics, which enables an increase indisplay quality of the display device.

<Operation Example of Pixel>

An operation example of the above pixel will be described with referenceto FIGS. 16A and 16B. Specifically, an operation example of the pixel inperiods ta to th included in the periods t1 to t4 in FIG. 14B and FIG.15B will be described below with reference to FIGS. 16A and 16B. Notethat FIG. 16B shows the potentials of the scan lines 4_2, 5_2, and 6_2and the inverted scan line 72, which are provided in the second row inthe pixel portion, and the nodes D to F. In FIG. 16B, signals input tothe respective wirings are provided in parentheses.

In the period ta, the selection signal is input to the scan line 4_2 andis not input to the scan lines 5_2 and 6_2 and the inverted scan line7_2. Thus, the transistor 15 is turned on and the transistors 11, 12,14, and 16 are turned off, so that the node F becomes at a potential V0.

In the period tb, the selection signal is input to the scan line 5_2.Accordingly, the transistors 12 and 14 are turned on, so that the node Dand the node E become at a potential V1 and at a potential V0,respectively. In response to the change of the potential of the node Dto the potential V1, the transistor 13 is turned on.

In the period tc, the input of the selection signal to the scan line 4_2is stopped. Accordingly, the transistor 15 is turned off. Here, thetransistor 13 remains on until the voltage between the gate and thesource becomes lower than or equal to the threshold voltage. In otherwords, the transistor 13 remains on until the potentials of the nodes Eand F (the source of the transistor 13) become lower than the potentialof the node D (potential V1) by the threshold voltage of the transistor13 (Vth13). Consequently, the potentials of the nodes E and F become theabove values.

In the period td, the input of the selection signal to the scan line 5_2is stopped. Accordingly, the transistors 12 and 14 are turned off.

In the period te, the selection signal is input to the scan line 6_2.Accordingly, the transistor 11 is turned on. Assume that the potential(Vdata) of an image signal is supplied to the signal line 8. Thus, thenode E becomes at the potential (Vdata) of the image signal. Inaddition, the potentials of the nodes D and F are also changed owing tothe potential of the node E. Specifically, the potential of the node Din a floating state is raised or lowered by the amount of change inpotential of the node E (the difference between the potential (Vdata) ofthe image signal and the potential lower than the potential V1 by thethreshold voltage of the transistor 13 (Vth13)) owing to the capacitivecoupling between the node D and the node E through the capacitor 17 (thepotential of the node D becomes V1+[Vdata−(V1−Vth13)]=Vdata+Vth13); andthe potential of the node F in a floating state is raised or lowered bythe amount of change in potential of the node E owing to the capacitivecoupling between the node E and the node F through the capacitor 18 (thepotential of the node F becomes V1−Vth13+[Vdata−(V1−Vth13)]=Vdata).

In the period tf, the selection signal is input to the scan line 4_2.Accordingly, the transistor 15 is turned on, so that the node F becomesat a potential of V0.

In the period tg, the input of the selection signal to the scan line 4_2is stopped. Accordingly, the transistor 15 is turned off.

In the period th, the selection signal is input to the inverted scanline 7_2. Accordingly, the transistor 16 is turned on, so that a currentdepending on the voltage between the gate and the source of thetransistor 13 is supplied to the organic EL element 19. Here, thevoltage corresponds to the difference between the potential of the nodeD (Vdata+Vth13) and the potential of the node F. In this case, thecurrent supplied to the organic EL element 19 (the drain current in asaturated region of the transistor 13) is not dependent on the thresholdvoltage of the transistor 13.

Through the above operations, the pixels 10 display an image inaccordance with the potential (Vdata) of the image signal. In theoperation example of the pixel, current can be supplied to the organicEL element 19 without dependence on the threshold voltage of thetransistor 13 provided in the pixel 10. Thus, even when the thresholdvoltages vary among the transistors 13 included in the plurality ofpixels in the display device disclosed in this specification, it ispossible to reduce deterioration in display quality.

In the above-described display device, the operation of the invertedpulse output circuits is controlled by a plurality of kinds of signals.Thus, a flow-through current generated in the inverted pulse outputcircuits can be reduced. Further, signals used for the operation of theplurality of pulse output circuits are used as the plurality of kinds ofsignals. That is, the inverted pulse output circuits can be operatedwithout generating a signal additionally.

<Example of Display Device including Liquid Crystal Element>

In this embodiment, a display device including an organic EL element asthe display element is described in detail; however, it is not limitedthereto. For example, application of this embodiment to a display deviceincluding a liquid crystal element as the display element is readilyconceived by those skilled in the art. As a specific example, astructure of a pixel which can be applied to a display device includinga liquid crystal element will be described below.

FIG. 18A is a circuit diagram illustrating a structure example of thepixel of the display device including a liquid crystal element. A pixel50 in FIG. 18A includes a transistor 51, a capacitor 52, and an elementin which a liquid crystal material is filled between a pair ofelectrodes (hereinafter also referred to as a liquid crystal element)53.

One of a source and a drain of the transistor 51 is electricallyconnected to a signal line 55, and a gate of the transistor 51 iselectrically connected to a scan line 54.

One of electrodes of the capacitor 52 is electrically connected to theother of the source and the drain of the transistor 51, and the other ofthe electrodes of the capacitor 52 is electrically connected to a wiringfor supplying a common potential.

One of electrodes of the liquid crystal element 53 is electricallyconnected to the other of the source and the drain of the transistor 51,and the other of the electrodes of the liquid crystal element 53 iselectrically connected to a wiring for supplying a common potential.Note that the common potential supplied to the other of the electrodesof the liquid crystal element 53 may be different from the commonpotential supplied to the wiring electrically connected to the other ofthe electrodes of the capacitor 52.

FIG. 18B illustrates part of a cross section of the pixel 50.

FIG. 18B shows an example where the transistor 51 and the capacitor 52are provided in the same plane. With such a structure, one of capacitorelectrodes, a dielectric layer, and the other of the capacitorelectrodes, which are included in the capacitor 52, can be formed usingthe same layers and the same materials as the gate electrode, the gateinsulating film, and the source electrode (drain electrode), which areincluded in the transistor 51, respectively.

When the transistor 51 and the capacitor 52 are provided in the sameplane, the number of manufacturing steps of a display device can bereduced; thus, productivity can be increased.

Any of the transistors described in the above embodiments can be appliedto the transistor 51. FIG. 18B shows an example where a transistor whosestructure and manufacturing method are similar to those of FIGS. 1A and1B is used.

A planarization insulating film 90 having an opening portion reachingthe drain electrode of the transistor 51 is provided over the transistor51 and the capacitor 52.

An electrode 91 is provided over the planarization insulating film 90.The electrode 91 is in contact with the drain electrode of thetransistor 51 through the opening portion in the planarizationinsulating film 90.

An insulating film 92 serving as an alignment film is provided over theelectrode 91.

A liquid crystal layer 93 is provided over the insulating film 92.

An insulating film 94 serving as an alignment film is provided over theliquid crystal layer 93.

A spacer 95 is provided over the insulating film 94.

An electrode 96 is provided over the spacer 95 and the insulating film94.

A substrate 97 is provided over the electrode 96.

Note that the planarization insulating film 90 can be formed using anyof the materials for the planarization insulating film 126 in Embodiment2.

For the liquid crystal layer 93, a thermotropic liquid crystal, alow-molecular liquid crystal, a polymer liquid crystal, apolymer-dispersed liquid crystal, a ferroelectric liquid crystal, ananti-ferroelectric liquid crystal, or the like may be used. Such aliquid crystal material exhibits a cholesteric phase, a smectic phase, acubic phase, a chiral nematic phase, an isotropic phase, or the likedepending on conditions.

For the liquid crystal layer 93, a liquid crystal material exhibiting ablue phase may be used. In that case, the insulating films 92 and 94serving as the alignment films are not necessarily provided.

The electrode 91 may be formed using a conductive film having atransmitting property with respect to visible light.

As the electrode 91, for example, an oxide film such as an In—Zn—W-basedoxide film, an In—Sn-based oxide film, an In—Zn-based oxide film, anIn-based oxide film, a Zn-based oxide film, or a Sn-based oxide film maybe used. The above oxide film may contain a minute amount of Al, Ga, Sb,F, or the like. Further, a metal thin film having a thickness smallenough to transmit light (preferably, approximately 5 nm to 30 nm) canalso be used.

The electrode 91 is preferably a film which efficiently reflects visiblelight. For example, a film containing aluminum, titanium, chromium,copper, molybdenum, silver, tantalum, or tungsten may be used as theelectrode 91.

The electrode 96 can be formed using any of the films for the electrode91. Note that when the electrode 91 has a transmitting property withrespect to visible light, it is preferable that the electrode 96efficiently reflect visible light. When the electrode 91 efficientlyreflects visible light, it is preferable that the electrode 96 have atransmitting property with respect to visible light.

Positions of the electrode 91 and the electrode 96 are not limited tothe structure illustrated in FIG. 18B, and the electrode 91 and theelectrode 96 may be replaced with each other.

Each of the insulating films 92 and 94 may be formed using an organiccompound material or an inorganic compound material.

The spacer 95 may be formed using an organic compound material or aninorganic compound material. Note that the spacer 95 can have a varietyof shapes such as a columnar shape and a spherical shape.

The transistor 51 connected to the liquid crystal element 53 has lessvariation in electric characteristics, which enables an increase indisplay quality of the display device.

A region where the electrode 91, the insulating film 92, the liquidcrystal layer 93, the insulating film 94, and the electrode 96 overlapwith one another serves as the liquid crystal element 53.

For the substrate 97, a glass material, a resin material, a metalmaterial, or the like may be used. The substrate 97 may be a flexiblesubstrate.

The transistor 51 has less variation in electric characteristics, whichenables an increase in display quality of the display device.

As described in this embodiment, any of the transistors described in theabove embodiments can be used for part of a display device. Since thetransistor has less variation in electric characteristics, displayquality of the display device can be increased.

Embodiment 4

A semiconductor device disclosed in this specification can be applied toa variety of electronic devices (including game machines). Examples ofelectronic devices to which the present invention can be applied includea television set (also referred to as a television or a televisionreceiver), a monitor of a computer, cameras such as a digital camera anda digital video camera, a digital photo frame, a mobile phone, aportable game machine, a portable information terminal, an audioreproducing device, a game machine (e.g., a pachinko machine or a slotmachine), a game console, and the like. Specific examples of theseelectronic devices are illustrated in FIGS. 19A to 19C and FIGS. 20A to20C.

FIG. 19A illustrates a table 9000 having a display portion. In the table9000, a display portion 9003 is incorporated in a housing 9001 and animage can be displayed on the display portion 9003. Note that thehousing 9001 is supported by four leg portions 9002. Further, a powercord 9005 for supplying power is provided for the housing 9001.

The semiconductor device described in any of the above embodiments canbe used in the display portion 9003, so that the electronic device canhave high reliability.

The display portion 9003 has a touch-input function. When a user touchesdisplayed buttons 9004 which are displayed on the display portion 9003of the table 9000 with his/her fingers or the like, the user can carryout operation of the screen and input of information. Further, when thetable may be made to communicate with home appliances or control thehome appliances, the display portion 9003 may function as a controldevice which controls the home appliances by operation on the screen.For example, with use of the semiconductor device having an image sensorfunction, the display portion 9003 can have a touch input function.

Further, the screen of the display portion 9003 can be placedperpendicular to a floor with a hinge provided for the housing 9001;thus, the table 9000 can also be used as a television device. When atelevision device having a large screen is set in a small room, an openspace is reduced; however, when a display portion is incorporated in atable, a space in the room can be efficiently used.

FIG. 19B illustrates a television set 9100. In the television set 9100,a display portion 9103 is incorporated in a housing 9101 and an imagecan be displayed on the display portion 9103. Note that the housing 9101is supported by a stand 9105 here.

The television set 9100 can be operated with an operation switch of thehousing 9101 or a separate remote controller 9110. Channels and volumecan be controlled with an operation key 9109 of the remote controller9110 so that an image displayed on the display portion 9103 can becontrolled. Furthermore, the remote controller 9110 may be provided witha display portion 9107 for displaying data output from the remotecontroller 9110.

The television set 9100 illustrated in FIG. 19B is provided with areceiver, a modem, and the like. With use of the receiver, generaltelevision broadcasting can be received. Further, when the televisionset 9100 is connected to a communication network with or without wiresvia the modem, one-way (from a transmitter to a receiver) or two-way(between a transmitter and a receiver or between receivers) datacommunication can be performed.

The semiconductor device described in any of the above embodiments canbe used in the display portions 9103 and 9107, so that the televisionset and the remote controller can have high reliability.

FIG. 19C illustrates a computer which includes a main body 9201, ahousing 9202, a display portion 9203, a keyboard 9204, an externalconnection port 9205, a pointing device 9206, and the like.

The semiconductor device described in any of the above embodiments canbe used in the display portion 9203, so that the computer can have highreliability.

FIGS. 20A and 20B illustrate a tablet terminal that can be folded. InFIG. 20A, the tablet terminal is opened (unfolded) and includes ahousing 9630, a display portion 9631 a, a display portion 9631 b, aswitch 9034 for switching display modes, a power switch 9035, a switch9036 for switching to power-saving mode, a clip 9033, and an operationswitch 9038.

The semiconductor device described in any of the above embodiments canbe used in the display portion 9631 a and the display portion 9631 b, sothat the tablet terminal can have high reliability.

Part of the display portion 9631 a can be a touch panel region 9632 aand data can be input when a displayed operation key 9638 is touched.Note that FIG. 20A shows, as an example, that half of the area of thedisplay portion 9631 a has only a display function and the other half ofthe area has a touch panel function. However, an embodiment of thepresent invention is not limited to this structure, and the wholedisplay portion 9631 a may have a touch panel function. For example, allthe area of the display portion 9631 a can display keyboard buttons andserve as a touch panel while the display portion 9631 b can be used as adisplay screen.

Like the display portion 9631 a, part of the display portion 9631 b canbe a touch panel region 9632 b. When a finger, a stylus, or the liketouches the place where a button 9639 for switching to keyboard displayis displayed in the touch panel, keyboard buttons can be displayed onthe display portion 9631 b.

Touch input can be performed concurrently on the touch panel regions9632 a and 9632 b.

The switch 9034 for switching display modes can switch displayorientation (e.g., between landscape mode and portrait mode) and selecta display mode (switch between monochrome display and color display),for example. With the switch 9036 for switching to power-saving mode,the luminance of display can be optimized in accordance with the amountof external light at the time when the tablet terminal is in use, whichis detected with an optical sensor incorporated in the tablet terminal.The tablet terminal may include another detection device such as asensor for detecting orientation (e.g., a gyroscope or an accelerationsensor) in addition to the optical sensor.

Although the display portion 9631 a and the display portion 9631 b havethe same display size in FIG. 20A, one embodiment of the presentinvention is not limited to this example. The display portion 9631 a andthe display portion 9631 b may have different sizes or different displayquality. For example, one of them may be a display panel that candisplay higher-definition images than the other.

FIG. 20B illustrates the tablet terminal which is folded, which includesthe housing 9630, a solar cell 9633, a charge and discharge controlcircuit 9634, a battery 9635, and a DCDC converter 9636. Note that FIG.20B shows an example of a structure of the charge and discharge controlcircuit 9634 that includes a battery 9635 and a DCDC converter 9636.

Since the tablet terminal can be folded in two, the housing 9630 can beclosed when the tablet terminal is not in use. Thus, the displayportions 9631 a and 9631 b can be protected, thereby providing a tabletterminal with high endurance and high reliability for long-term use.

In addition, the tablet terminal illustrated in FIGS. 20A and 20B canhave a function of displaying a variety of kinds of data (e.g., a stillimage, a moving image, and a text image), a function of displaying acalendar, a date, the time, or the like on the display portion, atouch-input function of operating or editing the data displayed on thedisplay portion by touch input, a function of controlling processing bya variety of kinds of software (programs), and the like.

The solar cell 9633, which is attached on the surface of the tabletterminal, supplies electric power to a touch panel, a display portion,an image signal processor, and the like. Note that the solar cell 9633can be provided on one or both surfaces of the housing 9630, so that thebattery 9635 can be charged efficiently. When a lithium ion battery isused as the battery 9635, there is an advantage of downsizing or thelike.

The structure and the operation of the charge and discharge controlcircuit 9634 illustrated in FIG. 20B will be described with reference toa block diagram in FIG. 20C. The solar cell 9633, the battery 9635, theDCDC converter 9636, a converter 9637, switches SW1 to SW3, and thedisplay portion 9631 are illustrated in FIG. 20C, and the battery 9635,the DCDC converter 9636, the converter 9637, and the switches SW1 to SW3correspond to the charge and discharge control circuit 9634 illustratedin FIG. 20B.

First, an example of the operation in the case where power is generatedby the solar cell 9633 using external light is described. The voltage ofpower generated by the solar cell is raised or lowered by the DCDCconverter 9636 so that the power has a voltage for charging the battery9635. Then, when the power from the solar cell 9633 is used for theoperation of the display portion 9631, the switch SW1 is turned on andthe voltage of the power is raised or lowered by the converter 9637 soas to be a voltage needed for the display portion 9631. In addition,when display on the display portion 9631 is not performed, the switchSW1 is turned off and a switch SW2 is turned on so that the battery 9635may be charged.

Note that the solar cell 9633 is described as an example of a powergeneration unit; however, without limitation thereon, the battery 9635may be charged using another power generation unit such as apiezoelectric element or a thermoelectric conversion element (Peltierelement). For example, the battery 9635 may be charged with anon-contact power transmission module which is capable of charging bytransmitting and receiving power by wireless (without contact), oranother charging unit may be used in combination.

The structures, methods, and the like described in this embodiment canbe combined as appropriate with any of the structures, methods, and thelike described in the other embodiments.

This application is based on Japanese Patent Application serial no.2012-022451 filed with Japan Patent Office on Feb. 3, 2012, the entirecontents of which are hereby incorporated by reference.

What is claimed is:
 1. A semiconductor device comprising: a gateelectrode layer; a gate insulating film over the gate electrode layer;an oxide semiconductor film over the gate insulating film; a drainelectrode layer over the oxide semiconductor film, the drain electrodelayer overlapping with the gate electrode layer; and a source electrodelayer covering a part of an outer edge portion of the oxidesemiconductor film, wherein an outer edge portion of the drain electrodelayer is positioned on an inner side of an outer edge portion of thegate electrode layer.
 2. The semiconductor device according to claim 1,wherein the gate electrode layer comprises a first conductive layer, asecond conductive layer, and a third conductive layer, and wherein thefirst conductive layer and the third conductive layer are barrier layersfor blocking transfer of metal of the second conductive layer.
 3. Thesemiconductor device according to claim 1, wherein the source electrodelayer and the drain electrode layer include a fourth conductive layer, afifth conductive layer, and a sixth conductive layer, and wherein thefourth conductive layer and the sixth conductive layer are barrierlayers for blocking transfer of metal of the fifth conductive layer. 4.The semiconductor device according to claim 1, wherein a planar shape ofthe gate electrode layer is a rectangle.
 5. The semiconductor deviceaccording to claim 1, wherein a planar shape of the drain electrodelayer is a rectangle.
 6. The semiconductor device according to claim 1,wherein the oxide semiconductor film comprises an amorphous portion anda crystal portion, and wherein a c-axis of the crystal portion isparallel to a normal vector of a surface where the oxide semiconductorfilm is formed or a normal vector of a surface of the oxidesemiconductor film.
 7. The semiconductor device according to claim 1,wherein the oxide semiconductor film comprises at least indium.
 8. Thesemiconductor device according to claim 1, further comprising: an oxideinsulating film comprising an oxygen excess region over the oxidesemiconductor film, the source electrode layer, and the drain electrodelayer; a barrier film over the oxide insulating film; a planarizationinsulating film over the barrier film; and a pixel electrode layer incontact with the drain electrode layer through an opening portion in theoxide insulating film, the barrier film, and the planarizationinsulating film.
 9. A semiconductor device comprising: a gate electrodelayer having an opening portion; a gate insulating film over the gateelectrode layer; an oxide semiconductor film over the gate insulatingfilm; a drain electrode layer over the oxide semiconductor film, thedrain electrode layer overlapping with an inner edge portion of the gateelectrode layer; and a source electrode layer covering a part of anouter edge portion of the oxide semiconductor film, wherein an outeredge portion of the drain electrode layer is positioned on an inner sidethan an outer edge portion of the gate electrode layer.
 10. Thesemiconductor device according to claim 9, wherein the gate electrodelayer comprises a first conductive layer, a second conductive layer, anda third conductive layer, and wherein the first conductive layer and thethird conductive layer are barrier layers for blocking transfer of metalof the second conductive layer.
 11. The semiconductor device accordingto claim 9, wherein the source electrode layer and the drain electrodelayer include a fourth conductive layer, a fifth conductive layer, and asixth conductive layer, and wherein the fourth conductive layer and thesixth conductive layer are barrier layers for blocking transfer of metalof the fifth conductive layer.
 12. The semiconductor device according toclaim 9, wherein a planar shape of the gate electrode layer is arectangle.
 13. The semiconductor device according to claim 9, wherein aplanar shape of the drain electrode layer is a rectangle.
 14. Thesemiconductor device according to claim 9, wherein the oxidesemiconductor film comprises an amorphous portion and a crystal portion,and wherein a c-axis of the crystal portion is parallel to a normalvector of a surface where the oxide semiconductor film is formed or anormal vector of a surface of the oxide semiconductor film.
 15. Thesemiconductor device according to claim 9, wherein the oxidesemiconductor film comprises at least indium.
 16. The semiconductordevice according to claim 9, further comprising: an oxide insulatingfilm comprising an oxygen excess region over the oxide semiconductorfilm, the source electrode layer, and the drain electrode layer; abarrier film over the oxide insulating film; a planarization insulatingfilm over the barrier film; and a pixel electrode layer in contact withthe drain electrode layer through an opening portion in the oxideinsulating film, the barrier film, and the planarization insulatingfilm.
 17. A semiconductor device comprising: a gate electrode layerhaving an opening portion; a gate insulating film over the gateelectrode layer; an oxide semiconductor film over the gate insulatingfilm; a drain electrode layer over the oxide semiconductor film, thedrain electrode layer overlapping with an inner edge portion of the gateelectrode layer; and a source electrode layer covering a part of anouter edge portion of the oxide semiconductor film, the source electrodelayer having a discontinuous portion, wherein the discontinuous portionof the source electrode layer overlaps with a region where the outeredge portion of the oxide semiconductor film overlaps with the gateelectrode, and wherein an outer edge portion of the drain electrodelayer is positioned on an inner side than an outer edge portion of thegate electrode layer.
 18. The semiconductor device according to claim17, wherein the oxide semiconductor film comprises an amorphous portionand a crystal portion, and wherein a c-axis of the crystal portion isparallel to a normal vector of a surface where the oxide semiconductorfilm is formed or a normal vector of a surface of the oxidesemiconductor film.
 19. The semiconductor device according to claim 17,wherein the source electrode layer has a C-shape.
 20. The semiconductordevice according to claim 17, wherein a planar shape of the oxidesemiconductor film is a rectangle, and wherein the source electrodelayer covers three or more edges of the oxide semiconductor film